Prospects and applications of volatile memristors

D Kim, B Jeon, Y Lee, D Kim, Y Cho, S Kim - Applied Physics Letters, 2022 - pubs.aip.org
Since research on artificial intelligence has begun receiving much attention, interest in
efficient hardware that can process a complex and large amount of information has also …

Self‐rectifying memristors for three‐dimensional in‐memory computing

SG Ren, AW Dong, L Yang, YB Xue, JC Li… - Advanced …, 2024 - Wiley Online Library
Costly data movement in terms of time and energy in traditional von Neumann systems is
exacerbated by emerging information technologies related to artificial intelligence. In …

Multi-level Cells and Quantized Conductance Characteristics of Al2O3-Based RRAM Device for Neuromorphic System

Y Lee, J Park, D Chung, K Lee, S Kim - Nanoscale Research Letters, 2022 - Springer
Recently, various resistance-based memory devices are being studied to replace charge-
based memory devices to satisfy high-performance memory requirements. Resistance …

Implementation of a reservoir computing system using the short-term effects of Pt/HfO2/TaOx/TiN memristors with self-rectification

H Ryu, S Kim - Chaos, Solitons & Fractals, 2021 - Elsevier
Given the limitations of von Neumann computing systems, we propose a high-performance
reservoir computing system as an alternative. These systems operate as neural networks …

Synaptic and resistive switching behaviors in NiO/Cu2O heterojunction memristor for bioinspired neuromorphic computing

L Zhang, Z Tang, J Fang, X Jiang, YP Jiang… - Applied Surface …, 2022 - Elsevier
Artificial neural network-based computing prospectively overcomes the von Neumann
bottleneck of conventional computers and significantly improves computational efficiency …

Short-term memory characteristics in n-type-ZnO/p-type-NiO heterojunction synaptic devices for reservoir computing

H So, JK Lee, S Kim - Applied Surface Science, 2023 - Elsevier
We investigated the short-term memory characteristics of n-type-ZnO/p-type-NiO
heterojunction-based memristor devices to achieve a reservoir computing system. The …

Transition of short-term to long-term memory of Cu/TaOx/CNT conductive bridge random access memory for neuromorphic engineering

J Kim, JH Choi, S Kim, C Choi, S Kim - Carbon, 2023 - Elsevier
This work presents the resistive switching characteristics of the TaO x-based conductive-
bridge random-access memory (CBRAM) for neuromorphic engineering. Controlling the Cu …

Synaptic behaviors in flexible Au/WOx/Pt/mica memristor for neuromorphic computing system

L Zhang, Z Tang, D Yao, Z Fan, S Hu, QJ Sun… - Materials Today …, 2022 - Elsevier
Neuromorphic computing, composed of artificial synapses and neural network algorithms, is
expected to replace the traditional von Neumann computer architecture to build the next …

Bio-inspired synaptic functions from a transparent zinc-tin-oxide-based memristor for neuromorphic engineering

JH Ryu, B Kim, F Hussain, C Mahata, M Ismail… - Applied Surface …, 2021 - Elsevier
In this work, ITO/ZTO/ITO transparent resistive memory was fabricated using a fully
industrialized sputtering process. We investigate how the electrical properties correspond to …

Effect of program error in memristive neural network with weight quantization

TH Kim, S Kim, K Hong, J Park, S Youn… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Recently, various memory devices have been actively studied as suitable candidates for
synaptic devices, which are important memory and computing units in neuromorphic …