Synthesis and applications of III–V nanowires
E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …
dimensional examples, have developed into one of the most intensely studied fields of …
Nanowire photodetectors based on wurtzite semiconductor heterostructures
Using nanowires for photodetection constitutes an opportunity to enhance the absorption
efficiency while reducing the electrical cross-section of the device. Nanowires present …
efficiency while reducing the electrical cross-section of the device. Nanowires present …
High-Throughput Spectroscopy of Geometry-Tunable Arrays of Axial InGaAs Nanowire Heterostructures with Twin-Induced Carrier Confinement
Predicting the optical properties of large-scale ensembles of luminescent nanowire arrays
that host active quantum heterostructures is of paramount interest for on-chip integrated …
that host active quantum heterostructures is of paramount interest for on-chip integrated …
Perspectives and opportunities with multisubband plasmonics
In highly doped semiconductor quantum wells (QWs), electrons populate various energy
states from different subbands and, therefore, several optical intersubband transitions …
states from different subbands and, therefore, several optical intersubband transitions …
Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates
H Gu, C Hu, J Wang, Y Lu, JP Ao, F Tian… - Journal of Alloys and …, 2019 - Elsevier
Abstract Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-
standing GaN substrates grown by hydride vapor phase epitaxy. Detailed material …
standing GaN substrates grown by hydride vapor phase epitaxy. Detailed material …
GaN and AlGaN/AlN nanowire ensembles for ultraviolet photodetectors: effects of planarization with hydrogen silsesquioxane and nanowire architecture
The interest in nanowire photodetectors stems from their unique properties, such as high
sensitivity, fast response times, and compatibility with integrated circuit technology, making …
sensitivity, fast response times, and compatibility with integrated circuit technology, making …
Electrical and optical properties of heavily Ge-doped AlGaN
We report the effect of germanium as n-type dopant on the electrical and optical properties of
Al x Ga 1− x N layers grown by plasma-assisted molecular-beam epitaxy. The Al content has …
Al x Ga 1− x N layers grown by plasma-assisted molecular-beam epitaxy. The Al content has …
Near-infrared intersubband photodetection in GaN/AlN nanowires
Intersubband optoelectronic devices rely on transitions between quantum-confined electron
levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1 …
levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1 …
Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources
In this paper, we describe the design and characterization of 400 nm long (88 periods) Al x
Ga 1− x N/AlN (0≤ x≤ 0.1) quantum dot superlattices deposited on self-assembled GaN …
Ga 1− x N/AlN (0≤ x≤ 0.1) quantum dot superlattices deposited on self-assembled GaN …
[HTML][HTML] High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment
Z Liu, J Wang, H Gu, Y Zhang, W Wang, R **ong, K Xu - AIP Advances, 2019 - pubs.aip.org
This paper reports on a high-voltage vertical GaN Schottky barrier diode (SBD) using
fluorine (F) ion implantation treatment. Compared with the GaN SBD without F implantation …
fluorine (F) ion implantation treatment. Compared with the GaN SBD without F implantation …