[BOOK][B] Phonons in nanostructures
MA Stroscio, M Dutta - 2001 - books.google.com
This book focuses on the theory of phonon interactions in nanoscale structures with
particular emphasis on modern electronic and optoelectronic devices. The continuing …
particular emphasis on modern electronic and optoelectronic devices. The continuing …
Influence of electron-phonon interaction on the optical properties of III nitride semiconductors
XB Zhang, T Taliercio, S Kolliakos… - Journal of Physics …, 2001 - iopscience.iop.org
The electronic band structures of III nitride semiconductors calculated within the adiabatic
approximation give essential information about the optical properties of materials. However …
approximation give essential information about the optical properties of materials. However …
Composition dependence of optical phonon energies and Raman line broadening in hexagonal alloys
Studies of first-and second-order Raman scattering in hexagonal Al x Ga 1− x N alloys are
reported. The dependences of frequencies of all Raman-allowed optical phonons versus Al …
reported. The dependences of frequencies of all Raman-allowed optical phonons versus Al …
Phonons in ternary group-III nitride alloys
H Grille, C Schnittler, F Bechstedt - Physical Review B, 2000 - APS
The lattice dynamics of random A x B 1− x N alloys (A, B= A l, G a, In) is studied with a
method based on the modified random-element isodisplacement (MREI) and a rigid-ion …
method based on the modified random-element isodisplacement (MREI) and a rigid-ion …
Raman-scattering study of the InGaN alloy over the whole composition range
We present Raman-scattering measurements on In x Ga 1− x N over the entire composition
range of the alloy. The frequencies of the A 1 (LO) and E 2 modes are reported and show a …
range of the alloy. The frequencies of the A 1 (LO) and E 2 modes are reported and show a …
Ultraviolet Raman study of and phonons in alloys
We report on ultraviolet Raman spectroscopy of In x Ga 1− x N thin films grown on sapphire
by metal-organic chemical vapor deposition. The A 1 (LO) and E 2 phonon mode behavior …
by metal-organic chemical vapor deposition. The A 1 (LO) and E 2 phonon mode behavior …
[HTML][HTML] Dispersion relations of interface and quasi-confined phonon modes in ZnO/BeZnO quantum wells
H Yıldırım - Physics Letters A, 2021 - Elsevier
The long-wave optical phonon frequencies of Be x Zn 1− x O alloys are determined within
the modified random-element isodisplacement model. The results indicate a two-mode …
the modified random-element isodisplacement model. The results indicate a two-mode …
Raman scattering of indium-rich : Unexpected two-mode behavior of
TT Kang, A Hashimoto, A Yamamoto - Physical Review B—Condensed Matter …, 2009 - APS
Al x In 1− x N films (0.03≤ x≤ 0.80), particularly indium-rich AlInN films, are studied by
Raman scattering. We clearly observe a two-mode behavior of A 1 (LO) phonon and prove …
Raman scattering. We clearly observe a two-mode behavior of A 1 (LO) phonon and prove …
Effects of two-mode transverse optical phonons in bulk wurtzite AlGaN on electronic mobility in AlGaN/GaN quantum wells
Z Gu, SL Ban, DD Jiang, Y Qu - Journal of Applied Physics, 2017 - pubs.aip.org
The two-mode property of bulk transverse optical (TO) phonons in ternary mixed crystals of
wurtzite Al x Ga 1-x N has been investigated by introducing impurity modes in a modified …
wurtzite Al x Ga 1-x N has been investigated by introducing impurity modes in a modified …
The effect of interface diffusion on Raman spectra of wurtzite short-period GaN/AlN superlattices
We present an extensive theoretical and experimental study to identify the effect on the
Raman spectrum due to interface interdiffusion between GaN and AlN layers in short-period …
Raman spectrum due to interface interdiffusion between GaN and AlN layers in short-period …