Thermal management in neuromorphic materials, devices, and networks

F Torres, AC Basaran, IK Schuller - Advanced Materials, 2023 - Wiley Online Library
Abstract Machine learning has experienced unprecedented growth in recent years, often
referred to as an “artificial intelligence revolution.” Biological systems inspire the …

Challenges in materials and devices for resistive-switching-based neuromorphic computing

J Del Valle, JG Ramírez, MJ Rozenberg… - Journal of Applied …, 2018 - pubs.aip.org
This tutorial describes challenges and possible avenues for the implementation of the
components of a solid-state system, which emulates a biological brain. The tutorial is …

Towards engineering in memristors for emerging memory and neuromorphic computing: A review

AS Sokolov, H Abbas, Y Abbas… - Journal of …, 2021 - iopscience.iop.org
Resistive random-access memory (RRAM), also known as memristors, having a very simple
device structure with two terminals, fulfill almost all of the fundamental requirements of …

The coexistence of threshold and memory switching characteristics of ALD HfO 2 memristor synaptic arrays for energy-efficient neuromorphic computing

H Abbas, Y Abbas, G Hassan, AS Sokolov, YR Jeon… - Nanoscale, 2020 - pubs.rsc.org
The development of bioinspired electronic devices that can mimic the biological synapses is
an essential step towards the development of efficient neuromorphic systems to simulate the …

Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching

S Kim, J Chen, YC Chen, MH Kim, H Kim, MW Kwon… - Nanoscale, 2019 - pubs.rsc.org
We studied the pseudo-homeothermic synaptic behaviors by integrating complimentary
metal–oxide–semiconductor-compatible materials (hafnium oxide, aluminum oxide, and …

Partially Oxidized MXene Ti3C2Tx Sheets for Memristor having Synapse and Threshold Resistive Switching Characteristics

A Sokolov, M Ali, H Li, YR Jeon… - Advanced Electronic …, 2021 - Wiley Online Library
Transition metal carbides, called MXenes, can be used for MXene‐based unique electronic
devices such as new types of batteries, energy storage devices, and supercapacitors, where …

Functional oxides for photoneuromorphic engineering: toward a solar brain

A Pérez‐Tomás - Advanced Materials Interfaces, 2019 - Wiley Online Library
New device concepts and new computing principles are needed to balance our ever‐
growing appetite for data and information with the realization of the goals of increased …

Review on role of nanoscale HfO2 switching material in resistive random access memory device

S NM, NN, AN - Emergent Materials, 2022 - Springer
Typical semiconductor data storage devices reach a breaking point in terms of their physical
dimension and storage capacity. Among various upcoming high-density non-volatile …

A memristor crossbar array of titanium oxide for non-volatile memory and neuromorphic applications

H Abbas, Y Abbas, SN Truong, KS Min… - Semiconductor …, 2017 - iopscience.iop.org
In this work 3× 3 crossbar arrays of titanium oxide were fabricated and tested for non-volatile
memory applications and neuromorphic pattern recognition. The non-volatile memory …

Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics

Y Abbas, IS Han, AS Sokolov, YR Jeon… - Journal of Materials …, 2020 - Springer
The resistive switching random access memory (RRAM) device has received a great interest
for the next-generation non-volatile memory application, and resistive switching (RS) …