Controlling ultrafast material transformations with atomic precision is essential for future
nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase …

The properties of liquid Si–Ge binary systems under melting conditions deviate from those
expected by the ideal alloy approximation. Particularly, a nonlinear dependence of the …

A thorough study of the phosphorus (P) heavy do** of thin Silicon-On-Insulator (SOI)
layers by UV nanosecond Laser Thermal Annealing (LTA) is presented in this work. As a …

We investigate the recrystallization of thick phosphorus-implanted GeSn layers using 308
nm Ultraviolet Nanosecond Laser Annealing (UV-NLA). We identify the optimal annealing …

33 nm thick silicon on insulator films were implanted with boron at high dose (1.5× 10 16 or
2.5× 10 16 at/cm 2) and low energy (3 or 4 keV), then further annealed with 160 ns laser …

We present superconducting monocrystalline silicon-on-insulator thin 33 nm epilayers. They
are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers …

This chapter is devoted to the application of nanosecond laser annealing to the realization of
superconducting silicon layers and quantum devices. Though predicted since more than 50 …

In this paper, we discuss the characterization of boron-doped silicon superconducting thin
films with a thickness of 70 nm made on silicon-on-insulator substrates by ion implantation …

We report an industrially compatible process for the fabrication of superconducting
monocrystalline Si films (~ 30 nm thick). Increasing the boron implant energy by only one …