Nanotechnology covers a variety of scientific areas including chemistry, material science,
physics, biomedicine, biology, and engineering. Metal nanohybrid with extraordinary …

Recently, pulsed laser deposition (PLD) technology makes viable the epitaxial growth of
group III-nitrides on thermally active substrates at low temperature. The precursors …

Magnesium-doped gallium nitride nanowires have been synthesized via metal-catalyzed
chemical vapor deposition. Nanowires prepared on c-plane sapphire substrates were found …

With the largest band gap energy of all commercial semiconductors, GaN has found wide
application in the making of optoelectronic devices. It has also been used for photodetection …

We study the roles of graphene acting as a buffer layer for growth of an AlN film on a
sapphire substrate. Graphene can reduce the density of AlN nuclei but increase the growth …

Results obtained by atomic computer simulation based on an adapted Stillinger–Weber
(SW) potential concerning the structure and relative stability of lattice dislocations, tilt and …

Epitaxial growth of nitride compounds by the metalorganic vapor phase epitaxy (MOVPE)
technique is demonstrated for the first time on β-Ga 2 O 3 single crystal substrates, which are …

This article reviews metal organic vapour phase epitaxy (MOVPE) processes developed for
the group 13 nitrides AlN, GaN, InN and their alloys. The binaries are direct-gap …

We demonstrate the excitation of localized surface phonon polaritons in an array of sub-
diffraction pucks fabricated in an epitaxial layer of gallium nitride (GaN) on a silicon carbide …

Mobility and critical electric field for bulk Al x Ga 1-x N alloys across the full composition
range (0≤ x≤ 1) are analyzed to address the potential application of this material system for …