Fermi level pinning dependent 2D semiconductor devices: challenges and prospects
Motivated by the high expectation for efficient electrostatic modulation of charge transport at
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …
Field effect transistor‐based tactile sensors: From sensor configurations to advanced applications
J Wang, S Xu, C Zhang, A Yin, M Sun, H Yang, C Hu… - InfoMat, 2023 - Wiley Online Library
The past several decades have witnessed great progress in high‐performance field effect
transistors (FET) as one of the most important electronic components. At the same time, due …
transistors (FET) as one of the most important electronic components. At the same time, due …
Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers
Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong
Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height …
Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height …
2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects
The continuously intensifying demand for high-performance and miniaturized semiconductor
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …
Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage
As an approximation to the quantum state of solids, the band theory, developed nearly
seven decades ago, fostered the advance of modern integrated solid‐state electronics, one …
seven decades ago, fostered the advance of modern integrated solid‐state electronics, one …
Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS2
The electrical behavior and the photoresponse of rhenium disulfide field-effect transistors
(FETs) have been widely studied; however, only a few works have investigated the …
(FETs) have been widely studied; however, only a few works have investigated the …
Ultrafast Charge Transfer 2D MoS2/Organic Heterojunction for Sensitive Photodetector
The 2D MoS2 with superior optoelectronic properties such as high charge mobility and
broadband photoresponse has attracted broad research interests in photodetectors (PD) …
broadband photoresponse has attracted broad research interests in photodetectors (PD) …
[HTML][HTML] Optoelectronic memory in 2D MoS2 field effect transistor
Abstract 2D layered materials with their tunable bandgap and unique crystal structures are
excellent candidates for 2D optoelectronic memories. In this work, we present a simple …
excellent candidates for 2D optoelectronic memories. In this work, we present a simple …
[HTML][HTML] Fabrication of branch-like Aph@ LDH-MgO material through organic-inorganic hybrid conjugation for excellent anti-corrosion performance
Layered double hydroxides (LDH) frameworks have shown significant enhancement in
stability and reusability, and their tailorable architecture brings new insight into the …
stability and reusability, and their tailorable architecture brings new insight into the …
[HTML][HTML] Electronic properties of 2D materials and their junctions
With an extensive range of distinctive features at nano meter-scale thicknesses, two-
dimensional (2D) materials drawn the attention of the scientific community. Despite …
dimensional (2D) materials drawn the attention of the scientific community. Despite …