Semiconductor industry currently utilizes copper wafer bonding as one of key technologies
for 3D integration. This review paper describes both science and technology of copper wafer …

3D integration provides a promising solution to achieve system level integration with high
function density, small form factor, enhanced transmission speed and low power …

To solve the problems of high cost of nano-metal paste and high porosity of die-attach layer,
a novel and cost-effective micro–nano Cu composite paste was prepared and demonstrated …

In this paper, a review of surface-activation-based nanobonding technology for packaging
and integration is presented. In this paper, the focus will be on nanobonding technology for …

A new combined process of formic acid pretreatment for low temperature Cu direct bonding
was proposed. Cu film and Cu micro-electrodes samples were treated by formic acid and …

Physical vapor deposition provides a controllable means of growing two-dimensional
metallic thin films and one-dimensional metallic nanorods. While theories exist for the …

Low-temperature Cu/Cu direct bonding technology using formic acid vapor in situ treatment
was developed. Effect of formic acid vapor treatment conditions on Cu surface and bonding …

Copper nanoparticles (Cu NPs) fabricated by physical vapor deposition (PVD) were
introduced in Cu-Cu bonding as surface modification. The bonding structure with Ti …

Aluminum nitride (AlN) is a ceramic material with excellent dielectric and thermal properties,
and it is used in the microelectron and energy fields. Despite polishing, the roughness (rms> …

This chapter provides insights into direct Cu to Cu bonding and summarizes several critical
empirical results. After comparing the solder-less Cu–Cu bonding with the solder-based …