Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting

MG Kibria, S Zhao, FA Chowdhury, Q Wang… - Nature …, 2014‏ - nature.com
Solar water splitting is one of the key steps in artificial photosynthesis for future carbon-
neutral, storable and sustainable source of energy. Here we show that one of the major …

Atomic‐Scale Origin of Long‐Term Stability and High Performance of p‐GaN Nanowire Arrays for Photocatalytic Overall Pure Water Splitting

MG Kibria, R Qiao, W Yang, I Boukahil… - Advanced …, 2016‏ - Wiley Online Library
DOI: 10.1002/adma. 201602274 on GaN-based photocatalysts and photoelectrodes,
including both planar and nanoscale structures, have shown rather low quantum efficiency …

Synthesis, Characterization, and Variable Range Hop** Transport of Pyrite (FeS2) Nanorods, Nanobelts, and Nanoplates

M Cabán-Acevedo, D Liang, KS Chew, JP DeGrave… - ACS …, 2013‏ - ACS Publications
We report the growth, structural, and electrical characterization of single-crystalline iron
pyrite (FeS2) nanorods, nanobelts, and nanoplates synthesized via sulfidation reaction with …

Stable and high piezoelectric output of GaN nanowire-based lead-free piezoelectric nanogenerator by suppression of internal screening

MA Johar, MA Hassan, A Waseem, JS Ha, JK Lee… - Nanomaterials, 2018‏ - mdpi.com
A piezoelectric nanogenerator (PNG) that is based on c-axis GaN nanowires is fabricated on
flexible substrate. In this regard, c-axis GaN nanowires were grown on GaN substrate using …

[HTML][HTML] InN nanowires: Growth and optoelectronic properties

R Calarco - Materials, 2012‏ - mdpi.com
An overview on InN nanowires, fabricated using either a catalyst-free molecular beam
epitaxy method or a catalyst assisted chemical vapor deposition process, is provided …

Gated hall effect of nanoplate devices reveals surface-state-induced surface inversion in iron pyrite semiconductor

D Liang, M Cabán-Acevedo, NS Kaiser, S ** - Nano letters, 2014‏ - ACS Publications
Understanding semiconductor surface states is critical for their applications, but fully
characterizing surface electrical properties is challenging. Such a challenge is especially …

Exploiting piezoelectric charge for high performance graded InGaN nanowire solar cells

ATM Golam Sarwar, RC Myers - Applied physics Letters, 2012‏ - pubs.aip.org
The effect of piezoelectric charge on the performance of p-GaN/n-InGaN abrupt and graded
heterojunction nanowire solar cells is investigated by numerical simulation. In abrupt …

Observation of band bending in WTe2 after surface oxidation

A Chen, H Li, R Huang, Y Zhao, T Liu, Z Li, L Wang… - Surface Science, 2022‏ - Elsevier
Recently, the observations of spontaneous out-of-plane electric polarization and ferroelectric
switching in WTe 2 related devices with semimetal property a have generated considerable …

[HTML][HTML] Molecular beam epitaxy, photocatalytic solar water splitting, and carrier dynamics of InGaN micro-network deep-nano structures

IA Navid, Y Shen, P Zhou, J Schwartz, YM Goh, T Ma… - AIP Advances, 2025‏ - pubs.aip.org
GaN-based nanostructures are increasingly being used for a broad range of electronic as
well as optoelectronic device applications, and more recently artificial photosynthesis and …

Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting

J Kamimura, P Bogdanoff, M Ramsteiner… - Semiconductor …, 2016‏ - iopscience.iop.org
InN nanowires were grown on Si (111) substrates by plasma-assisted molecular beam
epitaxy. Raman spectroscopy showed that the nanowires were strain-free and allowed the …