Defects and reliability of GaN‐based LEDs: review and perspectives
Herein, the main factors and mechanisms that limit the reliability of gallium nitride (GaN)‐
based light‐emitting diodes (LEDs) are reviewed. An overview of the defects …
based light‐emitting diodes (LEDs) are reviewed. An overview of the defects …
Deep traps in GaN-based structures as affecting the performance of GaN devices
New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …
to compensation and recombination in these materials are discussed. New results on …
Real-space observation of a two-dimensional electron gas at semiconductor heterointerfaces
Mobile charge carriers are essential components in high-performance, nano-engineered
semiconductor devices. Employing charge carriers confined to heterointerfaces, the so …
semiconductor devices. Employing charge carriers confined to heterointerfaces, the so …
[HTML][HTML] GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for
solid-state lighting. They exhibit impressive figures of merit like an internal quantum …
solid-state lighting. They exhibit impressive figures of merit like an internal quantum …
Composition of wide bandgap semiconductor materials and nanostructures measured by atom probe tomography and its dependence on the surface electric field
Atom probe tomography allows for three-dimensional reconstruction of the elemental
distribution in materials at the nanoscale. However, the measurement of the chemical …
distribution in materials at the nanoscale. However, the measurement of the chemical …
Porous nitride semiconductors reviewed
Porous nitride semiconductors are a fast-develo** area of study, which open up a wide
range of new properties and applications, including strain free optical reflectors, chemical …
range of new properties and applications, including strain free optical reflectors, chemical …
Two-dimensional electron gas density in Al1− xInxN/AlN/GaN heterostructures (0.03≤ x≤ 0.23)
Compared to the AlGaN alloy, which can only be grown under tensile strain on GaN, the
AlInN alloy is predicted by Vegard's law to be lattice-matched (LM) on fully relaxed GaN …
AlInN alloy is predicted by Vegard's law to be lattice-matched (LM) on fully relaxed GaN …
Distributed Bragg reflectors for GaN-based vertical-cavity surface-emitting lasers
Featured Application GaN based vertical-cavity surface-emitting lasers. Abstract A
distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor …
distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor …
Gate-recessed enhancement-mode InAlN/AlN/GaN HEMTs with 1.9-A/mm drain current density and 800-mS/mm transconductance
R Wang, P Saunier, X **ng, C Lian… - IEEE electron device …, 2010 - ieeexplore.ieee.org
Having a drain current density of 1.9 A/mm, a peak extrinsic transconductance of 800
mS/mm (the highest reported in III-nitride transistors), ft/f max of 70/105 GHz, and V br of 29 …
mS/mm (the highest reported in III-nitride transistors), ft/f max of 70/105 GHz, and V br of 29 …
Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs
The enhancement of the extraction efficiency in light emitting diodes (LEDs) through the use
of photonic crystals (PhCs) requires a structure design that optimizes the interaction of the …
of photonic crystals (PhCs) requires a structure design that optimizes the interaction of the …