Aluminum nitride (AlN) polycrystals were prepared by pulse plasma sintering (PPS)
technique. The starting AlN powder mixtures were composed with 3.0 wt%, 5.0 wt% and 10 …

(57) ABSTRACT A multilayer structure including a hexagonal epitaxial layer, such as GaN or
other group III-nitride (III-N) semiconduc tors, a< 111> oriented textured layer, and a non …

the present invention relates epitaxial growth of a layer of a hexagonal material, such as
gallium nitride (GaN) or other group III-nitride (III-N) semiconductors, on a substrate whose …

H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface
barrier specially adapted for light emission; Processes or apparatus specially adapted for …

Embodiments are directed to glass-ceramic substrates with a III-V semiconductor layer, for
example, a GaN layer that can be used in LED lighting devices. The glass-ceramics material …

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-
nitride (III-N) semiconductors, a< 111> oriented textured layer, and a non-single crystal …

Provided is a ceramic member in which the difference in thermal expansion coefficient
between an insulating ceramic material and an electrically conductive ceramic material is …

(57) ABSTRACT A vibrating plate-bonded body includes a supporting substrate composed
of silicon, a vibrating plate composed of a highly rigid ceramics and having a thickness of …

An integrated circuit device includes an engineered substrate including a substantially
single crystal layer and a buffer layer coupled to the substantially single crystal layer. The …

(57) ABSTRACT A method is provided for forming a printed circuit board (PCB) assembly.
The method may include drilling a first plurality of vias having a first diameter in a PCB and …