Crystallographic orientation control and optical properties of GaN nanowires
The optical and electrical properties of nitride materials are closely related to their
crystallographic orientation. Here, we report our effort on crystallographic orientation …
crystallographic orientation. Here, we report our effort on crystallographic orientation …
Defect-related photoluminescence of gallium nitride/silicon nanoporous pillar array modulated by ammonia gas flow rate
BX Duan, ZH Wang, XJ Li - Materials Science in Semiconductor Processing, 2021 - Elsevier
The structural and physical properties of silicon nanoporous pillar array (Si-NPA) make it an
ideal template for preparing Si-based gallium nitride (GaN) optoelectronic devices with …
ideal template for preparing Si-based gallium nitride (GaN) optoelectronic devices with …
Direct growth of AlGaN nanorod LEDs on graphene-covered Si
High density of defects and stress owing to the lattice and thermal mismatch between nitride
materials and heterogeneous substrates have always been important problems and limit the …
materials and heterogeneous substrates have always been important problems and limit the …
[PDF][PDF] CONTROLLING THE SIZE OF C70 FULLERENE WHISKERS BY EVAPORATION OF SOLUTION DROPLETS
UK Makhmanov, SA Esanov, BA Aslonov… - Romanian Journal of …, 2023 - rjp.nipne.ro
The formation of one-dimensional nanostructures (nanowhiskers) during the evaporation of
a drop of C70 fullerene solution in ortho-xylene on a smooth surface of a glass substrate …
a drop of C70 fullerene solution in ortho-xylene on a smooth surface of a glass substrate …
Synthesis of Nanoscale Fullerene C60 Filaments in the Volume of an Evaporating Drop of a Molecular Solution and Preparation of Thin Nanostructured Coatings on …
The features of nucleation and the mechanisms of further growth of nano-and microsized
filamentary crystals (so-called whiskers) of fullerene in the volume of an isolated evaporating …
filamentary crystals (so-called whiskers) of fullerene in the volume of an isolated evaporating …
Low temperature processed CO2 laser-assisted RF-sputtered GaN thin film for wide bandgap semiconductors
SH Kim, CH Jo, MS Bae, M Ichimura… - Journal of Asian …, 2023 - Taylor & Francis
Owing to its wide bandgap (3.4 eV) and high electron mobility, GaN has attracted significant
attention for applications in solar cells, power transistors, and high-electron-mobility …
attention for applications in solar cells, power transistors, and high-electron-mobility …
Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence
Here, we demonstrate the growth of horizontal GaN nanowires (NWs) on silicon (111) by a
surface-directed vapor–liquid–solid growth. The influence of the Au/Ni catalysts migration …
surface-directed vapor–liquid–solid growth. The influence of the Au/Ni catalysts migration …
Crystal phase evolution in kinked GaN nanowires
Seed-catalysed growth has been proved to be an ideal method to selectively tune the crystal
structure of III–V nanowires along its growth axis. However, few results on relevant nitride …
structure of III–V nanowires along its growth axis. However, few results on relevant nitride …
Freestanding patterned polycrystalline GaN substrate by a straightforward and affordable technique
A new process for producing a freestanding patterned polycrystalline GaN substrate by
applying a straightforward and affordable technique is presented here. Such substrate was …
applying a straightforward and affordable technique is presented here. Such substrate was …
Unusually-high growth rate (∼ 2.8 μm/s) of germania nanowires and its hierarchical structures by an in-situ continuous precursor supply
Low-dimensional nanostructured semiconductors are becoming the promising materials for
high-performance nanophotonics, nanoelectronics, and quantum devices. To enable these …
high-performance nanophotonics, nanoelectronics, and quantum devices. To enable these …