Spin dynamics in semiconductors

MW Wu, JH Jiang, MQ Weng - Physics Reports, 2010 - Elsevier
This article reviews the current status of spin dynamics in semiconductors which has
achieved much progress in the recent years due to the fast growing field of semiconductor …

Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices

FH Pollak, H Shen - Materials Science and Engineering: R: Reports, 1993 - Elsevier
Modulation spectroscopy is a powerful method for the study and characterization of a large
number of semiconductor configurations, including bulk/thin film, microstructures …

Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materials

T Takagahara, K Takeda - Physical Review B, 1992 - APS
The quantum confinement effect on excitons in quantum dots of indirect-gap materials is
investigated and a mechanism that induces an indirect-to-direct conversion of the character …

Kinetic pathway in Stranski-Krastanov growth of Ge on Si (001)

YW Mo, DE Savage, BS Swartzentruber, MG Lagally - Physical review letters, 1990 - APS
The transition from 2D to 3D growth of Ge on Si (001) has been investigated with scanning
tunneling microscopy. A metastable 3D cluster phase with well-defined structure and shape …

Near-band-gap photoluminescence of Si-Ge alloys

J Weber, MI Alonso - Physical Review B, 1989 - APS
The low-temperature near-band-gap photoluminescence of Si 1− x Ge x is studied over the
whole composition range 0≤ x≤ 1. We identify free-and bound-exciton processes and …

Light emission from silicon

SS Iyer, YH **e - Science, 1993 - science.org
The possibility induction of light emission from silicon, an indirect bandgap material in which
radiative transitions are unlikely, raises several interesting and technologically important …

Valence band engineering in strained-layer structures

EP O'Reilly - Semiconductor Science and Technology, 1989 - iopscience.iop.org
It is now possible to grow high-quality strained-layer superlattices, in which individual layers
are composed of semiconductor materials which would normally have significantly different …

Silicon–germanium nanowires: chemistry and physics in play, from basic principles to advanced applications

M Amato, M Palummo, R Rurali, S Ossicini - Chemical reviews, 2014 - ACS Publications
The trend predicted by Moore's law sets forth strict requirements on the electronic properties
of materials that cannot always be satisfied by conventional semiconductors. Thus, the last …

[LLIBRE][B] Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy

JD Cressler, S Monfray, G Freeman, D Friedman… - 2018 - taylorfrancis.com
An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

X-ray absorption fine structure spectroscopy in nanomaterials

Z Sun, Q Liu, T Yao, W Yan, S Wei - Science China Materials, 2015 - Springer
X-ray absorption fine structure (XAFS) spectroscopy has been widely used for decades in a
wide range of scientific fields, including physics, chemistry, biology, materials sciences …