Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Spin dynamics in semiconductors
This article reviews the current status of spin dynamics in semiconductors which has
achieved much progress in the recent years due to the fast growing field of semiconductor …
achieved much progress in the recent years due to the fast growing field of semiconductor …
Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices
FH Pollak, H Shen - Materials Science and Engineering: R: Reports, 1993 - Elsevier
Modulation spectroscopy is a powerful method for the study and characterization of a large
number of semiconductor configurations, including bulk/thin film, microstructures …
number of semiconductor configurations, including bulk/thin film, microstructures …
Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materials
T Takagahara, K Takeda - Physical Review B, 1992 - APS
The quantum confinement effect on excitons in quantum dots of indirect-gap materials is
investigated and a mechanism that induces an indirect-to-direct conversion of the character …
investigated and a mechanism that induces an indirect-to-direct conversion of the character …
Kinetic pathway in Stranski-Krastanov growth of Ge on Si (001)
The transition from 2D to 3D growth of Ge on Si (001) has been investigated with scanning
tunneling microscopy. A metastable 3D cluster phase with well-defined structure and shape …
tunneling microscopy. A metastable 3D cluster phase with well-defined structure and shape …
Near-band-gap photoluminescence of Si-Ge alloys
J Weber, MI Alonso - Physical Review B, 1989 - APS
The low-temperature near-band-gap photoluminescence of Si 1− x Ge x is studied over the
whole composition range 0≤ x≤ 1. We identify free-and bound-exciton processes and …
whole composition range 0≤ x≤ 1. We identify free-and bound-exciton processes and …
Light emission from silicon
The possibility induction of light emission from silicon, an indirect bandgap material in which
radiative transitions are unlikely, raises several interesting and technologically important …
radiative transitions are unlikely, raises several interesting and technologically important …
Valence band engineering in strained-layer structures
EP O'Reilly - Semiconductor Science and Technology, 1989 - iopscience.iop.org
It is now possible to grow high-quality strained-layer superlattices, in which individual layers
are composed of semiconductor materials which would normally have significantly different …
are composed of semiconductor materials which would normally have significantly different …
Silicon–germanium nanowires: chemistry and physics in play, from basic principles to advanced applications
The trend predicted by Moore's law sets forth strict requirements on the electronic properties
of materials that cannot always be satisfied by conventional semiconductors. Thus, the last …
of materials that cannot always be satisfied by conventional semiconductors. Thus, the last …
[LLIBRE][B] Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
JD Cressler, S Monfray, G Freeman, D Friedman… - 2018 - taylorfrancis.com
An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
X-ray absorption fine structure spectroscopy in nanomaterials
Z Sun, Q Liu, T Yao, W Yan, S Wei - Science China Materials, 2015 - Springer
X-ray absorption fine structure (XAFS) spectroscopy has been widely used for decades in a
wide range of scientific fields, including physics, chemistry, biology, materials sciences …
wide range of scientific fields, including physics, chemistry, biology, materials sciences …