This article presents an up-to-date review of several methods used for extraction of diode
and solar cell model parameters. In order to facilitate the choice of the most appropriate …

In this paper, an analytic model is proposed, which provides, in a continuous manner, the
current–voltage (–) characteristic of high-performance tunneling FETs (TFETs) based on …

In this Part 1 of this series of articles, the accuracy on the obtention of the shunt resistance (R
sh), the series resistance (R s), the ideality factor (n), the light current (I lig), and the …

In this Part 2 of this series of articles, a discussion of the literature reported obtention of the
solar cell parameters (the shunt resistance (R sh), the series resistance (R s), the ideality …

This study focuses on the Electrostatic, linearity, and analogue/RF parameters of a single
heterojunction AlGaAs/GaAs-based high electron mobility transistor (HEMT). The device …

This paper is an addendum to reference (Rangel-Kuoppa 2022 Eng. Res. Express 4
015020), in which the deduction of the five solar cell parameters, through the polynomial …

This paper is an addendum to reference Rangel-Kuoppa 2022 Eng. Res. Express 4
015022), in which the application of Co-Content function $ CC\left (V, I\right)=\displaystyle …

A new integration method is presented for the extraction of the parameters of a single
exponential diode model with series resistance from the measured forward IV …

This article provides a unified look at MOSFET model parameter extraction methods that rely
on the application of successive differential and integral operators, their ratios, and various …

A new double integration-based method to extract model parameters is applied to
experimental polysilicon nanowire MOSFETs. The threshold voltage and Subthreshold …