Dilute ferromagnetic semiconductors: Physics and spintronic structures

T Dietl, H Ohno - Reviews of Modern Physics, 2014 - APS
This review compiles results of experimental and theoretical studies on thin films and
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …

Semiconductor spintronics

J Fabian, A Matos-Abiague, C Ertler, P Stano… - arxiv preprint arxiv …, 2007 - arxiv.org
Spintronics refers commonly to phenomena in which the spin of electrons in a solid state
environment plays the determining role. In a more narrow sense spintronics is an emerging …

Spin-related phenomena in spin 3/2 charge carrier holes systems

YB Lyanda-Geller - Solid State Communications, 2022 - Elsevier
Charge carrier holes provide a remarkable system for spintronics and quantum information
technology. In this review paper, I discuss spin-related phenomena in three-dimensional …

Spin injection and detection in silicon

I Žutić, J Fabian, SC Erwin - Physical review letters, 2006 - APS
Spin injection and detection in silicon is a difficult problem, in part because the weak spin-
orbit coupling and indirect gap preclude using standard optical techniques. Two ways to …

Ferromagnetism and spin-polarized charge carriers in thin films

RP Panguluri, P Kharel, C Sudakar, R Naik… - Physical Review B …, 2009 - APS
We present evidence for spin-polarized charge carriers in In 2 O 3 films. Both In 2 O 3 and Cr
doped In 2 O 3 films exhibit room-temperature ferromagnetism after vacuum annealing, with …

Emergent carrier spin polarization in (Fe, Al)-codoped ZnO thin films explored by Andreev Reflection spectroscopy

T Xu, X Gao, J Zhang, L Shi, L Ju, T Sun… - Journal of Alloys and …, 2024 - Elsevier
The carrier spin polarization of magnetic materials is one of the most critical elements for
current-driven spintronics devices. Experimental evidence of spin polarization of magnetic …

Andreev reflection measurements of spin polarization

P Chalsani, SK Upadhyay, O Ozatay… - Physical Review B …, 2007 - APS
We discuss aspects of Andreev reflection (AR) measurements in normal metal-
superconductor (NS) and ferromagnet-superconductor (FS) devices. We describe the …

Crossed Andreev reflection-induced magnetoresistance

F Giazotto, F Taddei, F Beltram, R Fazio - Physical review letters, 2006 - APS
We show that very large negative magnetoresistance can be obtained in magnetic trilayers
in a current-in-plane geometry owing to the existence of crossed Andreev reflection. This …

Andreev reflection in ferrimagnetic spin filters

F Rigato, S Piano, M Foerster, F Giubileo… - Physical Review B …, 2010 - APS
We have performed point-contact spectroscopy measurements on a sample constituted by a
metallic ferromagnetic oxide (SrRuO 3) bottom electrode and a tunnel ferrimagnetic (CoFe 2 …

Spin polarization of (Ga, Mn) As measured by Andreev spectroscopy: the role of spin-active scattering

S Piano, R Grein, CJ Mellor, K Výborný… - Physical Review B …, 2011 - APS
We investigate the spin polarization of the ferromagnetic semiconductor (Ga, Mn) As by point-
contact Andreev reflection spectroscopy. The conductance spectra are analyzed using a …