We realized ultra-narrow excitonic emission from single GaAs/AlGaAs quantum dots (QDs)
grown by a refined droplet epitaxy technique. We found that uncapped quantum dots can be …

The fabrication, by pure self-assembly, of GaAs/AlGaAs dot–ring quantum nanostructures is
presented. The growth is performed via droplet epitaxy, which allows for the fine control …

We introduce a high–temperature droplet epitaxy procedure, based on the control of the
arsenization dynamics of nanoscale droplets of liquid Ga on GaAs (111) A surfaces. The use …

The droplet epitaxy is an innovative growth method, performed in the molecular beam
epitaxy environment, for the fabrication of quantum nanostructures with highly designable …

The control over the spectral broadening of an ensemble of emitters, mainly attributable to
the size and shape dispersion and the homogenous broadening mechanisms, is crucial to …

We report the study on formation and thermal annealing of InAs quantum dots grown by
droplet epitaxy on GaAs (111) A surface. By following the changes in RHEED pattern, we …

We report the effect of the quantum dot aspect ratio on the sub‐gap absorption properties of
GaAs/AlGaAs quantum dot intermediate band solar cells. We have grown AlGaAs solar cells …

We report the fabrication procedure and the characterization of an Al0. 3Ga0. 7As solar cell
containing high‐density GaAs strain‐free quantum dots grown by droplet epitaxy. The …

In this work, we are dealing with the droplet epitaxially prepared quantum dots. This
technology is not only an alternative way of the strain induced technique to prepare quantum …

We fabricate high efficiency Ga As∕ Al Ga As quantum nanostructure active layer for
intersubband detectors and light emitting devices on a silicon substrate. The whole process …