Abstract A review of III–V nanowire-based infrared photodetectors is provided including
single nanowires, ensemble nanowires, and heterostructured nanowires. The performance …

The rapid advancement of main group III–V nanomaterials endows photodetectors (PDs)
with enhanced performance. At present, various III–V nanomaterials are systematically …

Here we report InAs nanowire (NW) near-infrared photodetectors having a detection
wavelength up to∼ 1.5 μm. The single InAs NW photodetectors displayed minimum …

Recently, III-V semiconductor nanowires have been widely explored as promising
candidates for high-performance photodetectors due to their one-dimensional morphology …

This study developed a new photoelectrochemical (PEC) sensor for the detection of the
hydrazine (N 2 H 4, HZ) based on a donor-π-bridge-acceptor (D-π-A) configuration organic …

Large‐scale growth of high‐quality III–V nanowires (NWs) on an expected substrate is
challenging the next‐generation optoelectronic devices. In this work, high‐quality III–V NWs …

Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier‐
transportation barriers, and foreign impurities (Au) with deep‐energy levels can form carrier …

We report a novel phase separation phenomenon observed in the growth of ternary In x Ga1-
x As nanowires by metalorganic chemical vapor deposition. A spontaneous formation of …

Recently, near‐infrared light photodetectors (NIRPDs) have attracted increasing interest due
to their promising applications in both military and civil purposes. One‐dimensional …

Abstract 1D III–V semiconductor nanowires (NWs) attract significant interests in fundamental
physics and promising applications of high‐performance room‐temperature infrared (IR) …