GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications

S Adachi - Journal of applied physics, 1985 - pubs.aip.org
The Al x Ga1− x As/GaAs heterostructure system is potentially useful material for high‐speed
digital, high‐frequency microwave, and electro‐optic device applications. Even though the …

Photoactive properties of supramolecular assembled short peptides

B Sun, K Tao, Y Jia, X Yan, Q Zou, E Gazit… - Chemical Society …, 2019 - pubs.rsc.org
Bioinspired nanostructures can be the ideal functional smart materials to bridge the
fundamental biology, biomedicine and nanobiotechnology fields. Among them, short …

[BUCH][B] Molecular beam epitaxy: fundamentals and current status

MA Herman, H Sitter - 2012 - books.google.com
Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-
quality semiconductor devices. It discusses the most important aspects of the MBE …

[BUCH][B] Physics of semiconductors

M Grundmann - 2010 - Springer
Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …

[BUCH][B] GaAs and related materials: bulk semiconducting and superlattice properties

S Adachi - 1994 - World Scientific
The Al x Ga 1− x As/GaAs heterostructure system is potentially of great importance for many
high-speed electronics and optoelectronic devices, because the lattice parameter difference …

Thermally induced atomic reconstruction into fully commensurate structures of transition metal dichalcogenide layers

JH Baek, HG Kim, SY Lim, SC Hong, Y Chang, H Ryu… - Nature materials, 2023 - nature.com
Twist angle between two-dimensional layers is a critical parameter that determines their
interfacial properties, such as moiré excitons and interfacial ferro-electricity. To achieve …

Photoluminescence of AlxGa1−xAs alloys

L Pavesi, M Guzzi - Journal of Applied Physics, 1994 - pubs.aip.org
A thorough discussion of the various features of the photoluminescence spectra of undoped,
p‐doped and n‐doped Al x Ga1− x As (0≤ x≤ 1) alloys is given. This review covers spectral …

Near-band-gap photoluminescence of Si-Ge alloys

J Weber, MI Alonso - Physical Review B, 1989 - APS
The low-temperature near-band-gap photoluminescence of Si 1− x Ge x is studied over the
whole composition range 0≤ x≤ 1. We identify free-and bound-exciton processes and …

Elementary building blocks of self-assembled peptide nanotubes

N Amdursky, M Molotskii, E Gazit… - Journal of the American …, 2010 - ACS Publications
In the world of biology,“self-assembly” is the ability of biological entities to interact with one
another to form supramolecular structures. One basic group of self-assembled structures is …

Optical properties of zinc-blende CdSe and Se films grown on GaAs

YD Kim, MV Klein, SF Ren, YC Chang, H Luo… - Physical Review B, 1994 - APS
We present room-temperature ellipsometric measurements of the dielectric function of Zn x
Cd 1− x Se single-crystal films grown on (001) GaAs in the 1.5–6.0-eV energy region x …