In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …

Strained GeSn alloys are promising for realizing light emitters based entirely on group IV
elements. Here, we report GeSn microdisk lasers encapsulated with a SiN x stressor layer to …

The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the
key to the realization of fully functional photonic-integrated circuits. Despite several years of …

The recent observation of a fundamental direct bandgap for GeSn group IV alloys and the
demonstration of low temperature lasing provide new perspectives on the fabrication of Si …

Group IV lasers are expected to revolutionize chip-to-chip optical communications in terms
of cost, scalability, yield, and compatibility to the existing infrastructure of silicon industries …

GeSn alloys are nowadays considered as the most promising materials to build Group IV
laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible …

A comprehensive study of optical transitions in direct-bandgap Ge0. 875Sn0. 125 group IV
alloys via photoluminescence measurements as a function of temperature, compressive …

The controlled application of strain in crystalline semiconductors can be used to modify their
basic physical properties to enhance performance in electronic and photonic device …

In this work we study, using experiments and theoretical modeling, the mechanical and
optical properties of tensile strained Ge microstructures directly fabricated in a state-of-the …

Strain engineering has emerged as a powerful tool to control the properties of electronic and
photonic structures. Strain has a direct impact on the mechanical properties and on the …