Control-Etched Ti3C2Tx MXene Nanosheets for a Low-Voltage-Operating Flexible Memristor for Efficient Neuromorphic Computation

J Gosai, M Patel, L Liu, A Lokhandwala… - … Applied Materials & …, 2024 - ACS Publications
Hardware neural networks with mechanical flexibility are promising next-generation
computing systems for smart wearable electronics. Overcoming the challenge of develo** …

2D MoS2 monolayers integration with metal oxide-based artificial synapses

MK Gautam, S Kumar, S Rani, I Zeimpekis… - Frontiers in …, 2024 - frontiersin.org
In this study, we report on a memristive device structure wherein monolayers of two-
dimensional (2D) molybdenum disulfide (MoS2) are integrated with an ultrathin yttrium oxide …

Investigation of Filament Formation and Surface Perturbation in Nanoscale-Y2O3 Memristor: A Physical Modeling Approach

S Kumar, M Dubey, M Nawaria, MK Gautam… - Journal of Electronic …, 2024 - Springer
A comprehensive physical electro-thermal modeling approach is explored to investigate the
intricate mechanisms underlying filament formation and the effect of surface perturbation in …

On the time series analysis of resistive switching devices

PS Thorat, DD Kumbhar, RD Oval, S Kumar… - Microelectronic …, 2025 - Elsevier
Resistive switching (RS) based memory or memristive devices have emerged as promising
candidates for resistive random-access memory (RRAM) and neuromorphic computing …