Meyer–Neldel rule in chalcogenide glasses: Recent observations and their consequences

N Mehta - Current Opinion in Solid State and Materials Science, 2010 - Elsevier
The phenomenon of Meyer–Neldel rule (MNR) can occur in any situation which involves an
activated process. However, the rule is still most commonly referred to in connection with …

Nature of mixed electrical transport in Ag2O–ZnO–P2O5 glasses containing WO3 and MoO3

L Pavić, A Šantić, J Nikolić, P Mošner, L Koudelka… - Electrochimica …, 2018 - Elsevier
This study reports on the nature of electrical transport and role of structural changes induced
by different type and content of TMO in Ag–containing glasses of xTMO–(30–0.5x) Ag 2 O …

Influence of Structural Distortion and Lattice Dynamics on Li-Ion Diffusion in Li3OCl1–xBrx Superionic Conductors

R Chen, Z Xu, Y Lin, B Lv, SH Bo… - ACS Applied Energy …, 2021 - ACS Publications
The antiperovskite superionic conductors Li3OCl and Li3OBr show great differences in ionic
conductivity. The more polarizable Li3OBr shows a lower ionic conductivity than Li3OCl …

Electrical transport phenomena prevailing in undoped nc-Si/a-SiNx: H thin films prepared by inductively coupled plasma chemical vapor deposition

D Das, B Sain - Journal of Applied Physics, 2013 - pubs.aip.org
A comprehensive analysis on the electrical transport phenomena prevailing in undoped nc-
Si/a-SiN x: H thin films prepared by inductively coupled plasma chemical vapor deposition …

Reverse Meyer-Neldel rule prevailing in the hole transport of B-doped nc-SiOx: H thin films sustaining degeneracy and performing as suitable window of nc-Si solar …

D Das, S Samanta - Physica E: Low-dimensional Systems and …, 2021 - Elsevier
Abstract Low-temperature (~ 250° C) plasma-CVD grown heavily B-doped nc-Si: H film
with~ 73% crystallinity, high electrical conductivity~ 2.0 S cm− 1, corresponding to elevated …

Electrically active boron do** in the core of Si nanocrystals by planar inductively coupled plasma CVD

C Patra, D Das - Journal of Applied Physics, 2019 - pubs.aip.org
An improvement in the do** efficiency in p-type nc-Si: H, a two-phase structure consisting
of Si-nanocrystallites embedded in an amorphous matrix, has been pursued via low …

Improved optical and electrical switching in Bi2S3 nested nano-networks with broad trap distribution

Y Tian, S Zhang, W Tan - Applied Nanoscience, 2022 - Springer
The nanostructures usually possess plenty of surface traps owing to their large surface-ratio
comparing with the corresponding bulk materials. Hence understanding the carrier transport …

Origin of Meyer-Neldel type compensation behavior in organic semiconductors at large carrier concentrations: Disorder versus thermodynamic description

II Fishchuk, A Kadashchuk, A Mityashin, MM Gavrilyuk… - Physical Review B, 2014 - APS
We have extended an effective medium approximation theory [Fishchuk, Kadashchuk,
Genoe, Ullah, Sitter, Singh, Sariciftci, and Bässler, Phys. Rev. B 81, 045202 (2010) …

An accurate method to determine the through-plane electrical conductivity and to study transport properties in film samples

Q Wei, H Suga, I Ikeda, M Mukaida, K Kirihara… - Organic …, 2016 - Elsevier
The through-plane conductivity of a film sample is critically important because it largely
affects the performance of batteries, capacitors, and thermoelectric devices. In this study, we …

Process-structure-property correlations in pulsed dc reactive magnetron sputtered vanadium oxide thin films

C Venkatasubramanian, OM Cabarcos… - Journal of Vacuum …, 2011 - pubs.aip.org
Cathode hysteresis in the reactive pulsed dc sputtering of a vanadium metal target was
investigated to correlate the structural and electrical properties of the resultant vanadium …