[HTML][HTML] Diffusion of n-type dopants in germanium
Germanium is being actively considered by the semiconductor community as a mainstream
material for nanoelectronic applications. Germanium has advantageous materials …
material for nanoelectronic applications. Germanium has advantageous materials …
Charged point defects in semiconductors
EG Seebauer, MC Kratzer - Materials Science and Engineering: R: Reports, 2006 - Elsevier
Native point defects control many aspects of semiconductor behavior. Such defects can be
electrically charged, both in the bulk and on the surface. This charging can affect numerous …
electrically charged, both in the bulk and on the surface. This charging can affect numerous …
On-chip infrared photonics with Si-Ge-heterostructures: What is next?
The integration of Ge on Si for photonics applications has reached a high level of maturity:
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …
Site-controlled and advanced epitaxial Ge/Si quantum dots: Fabrication, properties, and applications
In this review, we report on fabrication paths, challenges, and emerging solutions to
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …
Light emission from direct band gap germanium containing split-interstitial defects
The lack of useful and cost-efficient group-IV direct band gap light emitters still presents the
main bottleneck for complementary metal-oxide semiconductor-compatible short-distance …
main bottleneck for complementary metal-oxide semiconductor-compatible short-distance …
On the solubility and diffusivity of the intrinsic point defects in germanium
There is a strong interest to use germanium as an active device layer in deep sub-micron
devices. This imposes similar stringent material and process requirements for germanium as …
devices. This imposes similar stringent material and process requirements for germanium as …
Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling
A center from the family of “fourfold coordinated (FFC) defects”, previously predicted
theoretically, has been experimentally identified in crystalline silicon. It is shown that the …
theoretically, has been experimentally identified in crystalline silicon. It is shown that the …
Intrinsic and extrinsic diffusion of indium in germanium
Diffusion experiments with indium (In) in germanium (Ge) were performed in the temperature
range between 550 and 900 C. Intrinsic and extrinsic do** levels were achieved by …
range between 550 and 900 C. Intrinsic and extrinsic do** levels were achieved by …
Laser level scheme of self-interstitials in epitaxial Ge dots encapsulated in Si
Recently, it was shown that lasing from epitaxial Ge quantum dots (QDs) on Si substrates
can be obtained if they are partially amorphized by Ge ion bombardment (GIB). Here, we …
can be obtained if they are partially amorphized by Ge ion bombardment (GIB). Here, we …
[BOOK][B] Silicon, germanium, and their alloys: growth, defects, impurities, and nanocrystals
G Kissinger, S Pizzini - 2014 - books.google.com
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …
materials still demand research, eminently in view of the improvement of knowledge on …