A review on quantum computing: From qubits to front-end electronics and cryogenic MOSFET physics

F Jazaeri, A Beckers, A Tajalli… - 2019 MIXDES-26th …, 2019 - ieeexplore.ieee.org
Quantum computing (QC) has already entered the industrial landscape and several
multinational corporations have initiated their own research efforts. So far, many of these …

Energy-efficient computing at cryogenic temperatures

C Zota, A Ferraris, E Cha, M Prathapan, P Mueller… - Nature …, 2024 - nature.com
Increasing demand for data-intense computing applications—such as artificial intelligence,
large language models and high-performance computing—has created a need for …

Theoretical limit of low temperature subthreshold swing in field-effect transistors

A Beckers, F Jazaeri, C Enz - IEEE Electron Device Letters, 2019 - ieeexplore.ieee.org
This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs
that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical …

Characterization and compact modeling of nanometer CMOS transistors at deep-cryogenic temperatures

RM Incandela, L Song, H Homulle… - IEEE Journal of the …, 2018 - ieeexplore.ieee.org
Cryogenic characterization and modeling of two nanometer bulk CMOS technologies (0.16-
μm and 40-nm) are presented in this paper. Several devices from both technologies were …

Cryogenic MOS transistor model

A Beckers, F Jazaeri, C Enz - IEEE Transactions on Electron …, 2018 - ieeexplore.ieee.org
This paper presents a physics-based analytical model for the MOS transistor operating
continuously from room temperature down to liquid-helium temperature (4.2 K) from …

Characterization and modeling of 28-nm bulk CMOS technology down to 4.2 K

A Beckers, F Jazaeri, C Enz - IEEE Journal of the Electron …, 2018 - ieeexplore.ieee.org
This paper presents an experimental investigation, compact modeling, and low-temperature
physics-based modeling of a commercial 28-nm bulk CMOS technology operating at …

Physical model of low-temperature to cryogenic threshold voltage in MOSFETs

A Beckers, F Jazaeri, A Grill… - IEEE Journal of the …, 2020 - ieeexplore.ieee.org
This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2
K. Interface traps close to the band edge modify the saturating temperature behavior of the …

A cryogenic broadband sub-1-dB NF CMOS low noise amplifier for quantum applications

Y Peng, A Ruffino, E Charbon - IEEE Journal of Solid-State …, 2021 - ieeexplore.ieee.org
A cryogenic broadband low noise amplifier (LNA) for quantum applications based on a
standard 40-nm CMOS technology is reported. The LNA specifications are derived from the …

Characterization and modeling of 28-nm FDSOI CMOS technology down to cryogenic temperatures

A Beckers, F Jazaeri, H Bohuslavskyi, L Hutin… - Solid-State …, 2019 - Elsevier
This paper presents an extensive characterization and modeling of a commercial 28-nm
FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic …

Characterization and analysis of on-chip microwave passive components at cryogenic temperatures

B Patra, M Mehrpoo, A Ruffino… - IEEE Journal of the …, 2020 - ieeexplore.ieee.org
This paper presents the characterization and modeling of microwave passive components in
TSMC 40-nm bulk CMOS, including metal-oxide-metal (MoM) capacitors, transformers, and …