By the continuing downscaling of sub-micron transistors in the range of few to sub-
decananometers, we focus on the increasing relative level of the low-frequency noise in …

This paper highlights the opportunities and challenges of III-V nanoelectronics for future high-
speed, low-power digital logic applications. III-V materials in general have significantly …

A sustainable energy future requires power electronics that can enable significantly higher
efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide …

A review is given of reported trap states in the bandgaps of different polymorphs of the
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …

The rapid cadence of metal-oxide semiconductor field-effect transistor (MOSFET) scaling, as
seen in the new 2003 International Technology Roadmap for Semiconductors ITRS), is …

In this paper, we report a fabrication method that attains the" ideal" double-gate MOSFET
device structure. The top and bottom gates are inherently self-aligned to the source/drain …

Semiconductor materials and devices continue to occupy a preeminent technological
position due to their importance when building integrated electronic systems used in a wide …

Humidity control and monitoring are of great interest for a wide range of applications,
including moisture-sensitive products, storage of medicines, and environmental monitoring …

The world's first submicron pinned photodiode CMOS image sensors have been produced
by adding an optimized image sensor module to a 3.3 V, 0.6/spl mu/m CMOS process. The 4 …

Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS in nano-
scale circuits. In this paper, it is observed that in spite of improved device characteristics …