Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors
J Yang, K Liu, X Chen, D Shen - Progress in Quantum Electronics, 2022 - Elsevier
Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors
Much progress has been made in the area of wide bandgap semiconductors for applications
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …
Defect induced tunable light emitting diodes of compositionally modulated zinc gallium germanium oxides
To circumvent the large global demand of around∼ 15% of the total power requirements just
for electric lighting, there is an urgent need of devolving cost-effective rare earth free …
for electric lighting, there is an urgent need of devolving cost-effective rare earth free …
Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation
Currently, a significant portion (~ 50%) of global warming emissions, such as CO2, are
related to energy production and transportation. As most energy usage will be electrical (as …
related to energy production and transportation. As most energy usage will be electrical (as …
Native defects association enabled room-temperature p-type conductivity in β-Ga2O3
The room temperature hole conductivity of the ultra-wide bandgap semiconductor β-Ga 2 O
3 is a pre-requisite for develo** the next-generation electronic and optoelectronic devices …
3 is a pre-requisite for develo** the next-generation electronic and optoelectronic devices …
Environmentally-friendly and low-cost Fe3+-doped broadband NIR light-emitting phosphors
L **ang, X Zhou, Y Wang, L Li, S Jiang, G **ang… - Journal of …, 2022 - Elsevier
Near infrared (NIR) light emitting phosphors have attracted more and more attention with the
development of science and technology. Herein, we report a series of environmentally …
development of science and technology. Herein, we report a series of environmentally …
Zinc gallium oxide—a review from synthesis to applications
Spinel ZnGa2O4 has received significant attention from researchers due to its wide bandgap
and high chemical and thermal stability; hence, paving the way for it to have potential in …
and high chemical and thermal stability; hence, paving the way for it to have potential in …
Structural and optoelectronic characteristics of β-Ga 2 O 3 epitaxial films with Zn alloying and subsequent oxygen annealing
X Sun, K Liu, X Chen, Q Hou, Z Cheng… - Journal of Materials …, 2023 - pubs.rsc.org
Pure and∼ 7.5 at% Zn alloyed β-Ga2O3 epitaxial films were epitaxially grown by metal
organic chemical vapor deposition choosing sapphire (c-plane) as substrates, followed by …
organic chemical vapor deposition choosing sapphire (c-plane) as substrates, followed by …
Discovery of a Robust P‐Type Ultrawide Bandgap Oxide Semiconductor: LiGa5O8
LiGa5O8, an ultrawide bandgap semiconductor, is discovered to exhibit p‐type conductivity
at room temperature, making it the widest bandgap p‐type oxide semiconductor known to …
at room temperature, making it the widest bandgap p‐type oxide semiconductor known to …
Diffusion of dopants and impurities in β-Ga2O3
The understanding and availability of quantitative measurements of the diffusion of dopants
and impurities in Ga 2 O 3 are currently at an early stage. In this work, we summarize what is …
and impurities in Ga 2 O 3 are currently at an early stage. In this work, we summarize what is …