Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
We report on lattice-matched AlInN/GaN distributed Bragg reflectors (DBRs) with improved
overgrowth of the AlInN layers. Typically, AlInN layers are exposed to high temperatures …
overgrowth of the AlInN layers. Typically, AlInN layers are exposed to high temperatures …
Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate
In this paper, we investigate the structural properties of AlGaN/GaN heterostructures grown
by metal organic chemical vapor deposition on sapphire substrates with different …
by metal organic chemical vapor deposition on sapphire substrates with different …
Analysis of the mosaic structure of an ordered (Al, Ga) N layer
The mosaic structure of an (Al, Ga) N layer grown on (0001) sapphire showing natural
ordering was studied by high-resolution X-ray diffraction (HRXRD) reciprocal-space …
ordering was studied by high-resolution X-ray diffraction (HRXRD) reciprocal-space …
[PDF][PDF] XRD of gallium nitride and related compounds: strain, composition and layer thickness
P Kidd - Panalytical: Almelo, Netherlands, 2009 - malvern-panalytical.promoshops.nu
At the time of writing, gallium nitride, GaN, and related compounds are emerging as major
players in the business of electronics. This book provides an introduction to the X-ray …
players in the business of electronics. This book provides an introduction to the X-ray …
Strain relaxation in GaN/AlN superlattices on GaN (0001) substrate: Combined superlattice-to-substrate lattice misfit and thickness-dependent effects
The relaxation of built-up strain in the heteroepitaxial GaN/AlN superlattices (SLs) leads to
defect-related undesirable changes of the optical and electrical properties of SL-based …
defect-related undesirable changes of the optical and electrical properties of SL-based …
X‐ray diffraction study of strain and defect structure of nonpolar a‐plane GaN‐layers grown on r‐plane sapphire
RN Kyutt, MP Shcheglov, VV Ratnikov… - … status solidi (a), 2009 - Wiley Online Library
Structural state of nonpolar a‐plane GaN layers grown by MOVPE on r‐plane sapphire is
investigated by X‐ray diffraction method. Interplanar spacings were measured in three …
investigated by X‐ray diffraction method. Interplanar spacings were measured in three …
Influence of template type and buffer strain on structural properties of GaN multilayer quantum wells grown by PAMBE, an x-ray study
The influence of template type and residual strain of the buffer layer on the structural
properties of GaN/AlN superlattices (SLs) was studied using high resolution x-ray diffraction …
properties of GaN/AlN superlattices (SLs) was studied using high resolution x-ray diffraction …
Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures
The structural properties of AlGaN/GaN heterostructures grown by metal organic chemical
vapor deposition on sapphire substrates with different thicknesses were studied by high …
vapor deposition on sapphire substrates with different thicknesses were studied by high …
[PDF][PDF] Three-wave X-ray diffraction in distorted epitaxial structures
R Kyutt, M Scheglov - Journal of Applied Crystallography, 2013 - journals.iucr.org
Three-wave diffraction has been measured for a set of GaN, AlN, AlGaN and ZnO epitaxial
layers grown on c-sapphire. A Renninger scan for the primary forbidden 0001 reflection was …
layers grown on c-sapphire. A Renninger scan for the primary forbidden 0001 reflection was …
Sequential structural characterization of layers in the GaN/AlN/SiC/Si (111) system by X-ray diffraction upon every growth stage
VV Ratnikov, AE Kalmykov, AV Myasoedov… - Technical Physics …, 2013 - Springer
X-ray diffraction and transmission electron microscopy techniques have been used to study
the dynamics of variation of the structural characteristics and deformation state in SiC, AlN …
the dynamics of variation of the structural characteristics and deformation state in SiC, AlN …