Amorphous oxide semiconductor transistors have been a mature technology in display
panels for upward of a decade, and have recently been considered as promising back‐end …

Wurtzite ferroelectrics are an emerging material class that expands the functionality and
application space of wide bandgap semiconductors. Promising physical properties of binary …

Two-dimensional (2D) van der Waals materials have attracted great interest and facilitated
the development of post-Moore electronics owing to their novel physical properties and high …

In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide
(In2O3) gate-all-around (GAA) nanoribbon field-effect transistors (FETs) in a back-end-of …

As transistor dimensions reach the 3-nm node, interface and surface engineering emerges
as critical considerations. Challenges introduced by reduced conductivity and mobility due …

Ultrathin oxide semiconductors are promising candidates for back-end-of-line (BEOL)
compatible transistors and monolithic three-dimensional integration. Experimentally …

High-energy metal deposition significantly impacts the performance and reliability of two-
dimensional (2D) semiconductors and nanodevices. This study investigates the localized …

The remarkable dc performance of ultrathin indium oxide transistors offers a path toward
high-performance back-end-of-line (BEOL) and monolithically integrated logic and memory …

In this work, we report for the first time atomic-layer-deposited (ALD) all-oxide transistors
toward 3-D vertical integration, with thick ALD In 2 O 3 as gate electrodes, and In 2 O 3 itself …

Atomically thin oxide semiconductors are emerging as potential materials for their
potentiality in monolithic 3D integration and sensor applications. In this study, a charge …