[HTML][HTML] MBE-based growth of Sn-rich quantum wells and dots at low Sn deposition rates
Abstract Alloying Ge with Sn is a possible route towards obtaining a direct bandgap material
that can be integrated with Si technology for optoelectronic device applications. Low …
that can be integrated with Si technology for optoelectronic device applications. Low …
[HTML][HTML] Selective excitation of photon modes in silicon microdisk resonator by deterministic positioning of GeSi quantum dots
VA Zinovyev, MV Stepikhova, ZV Smagina… - Journal of Applied …, 2024 - pubs.aip.org
The emission properties of a single Si microdisk resonator with a deterministically
embedded GeSi quantum dot (QD) stack have been investigated. The results demonstrate …
embedded GeSi quantum dot (QD) stack have been investigated. The results demonstrate …
Real Time Observation of Island Shrinkage <?format ?>due to Surface Alloying during Si Cap**
The Si cap** of Ge/Si (001) islands was observed by in situ time-resolved transmission
electron microscopy. During the initial stages of the Si deposition, islands were observed not …
electron microscopy. During the initial stages of the Si deposition, islands were observed not …
Self-ordering of a Ge island single layer induced by Si overgrowth
We provide a direct experimental proof and the related modeling of the role played by Si
overgrowth in promoting the lateral ordering of Ge islands grown by chemical vapor …
overgrowth in promoting the lateral ordering of Ge islands grown by chemical vapor …
Mechanism of quantum dots capped with : An AFM, electron microscopy, and x-ray anomalous diffraction study
J Coraux, B Amstatt, JA Budagoski… - Physical Review B …, 2006 - APS
Cap** of GaN quantum dots with AlN has been studied at the monolayer scale by
combining atomic force microscopy, high resolution electron microscopy, and grazing …
combining atomic force microscopy, high resolution electron microscopy, and grazing …
Analysis of SiGe/Si quantum dot superlattices grown by low-pressure chemical vapor deposition for thin solar cells
We have grown SiGe/Si quantum dot superlattices (QDSLs) via low-pressure chemical
vapor deposition (LPCVD) in order to analyze their performance as thin-film solar cells. Self …
vapor deposition (LPCVD) in order to analyze their performance as thin-film solar cells. Self …
Vertical and lateral ordering of Ge islands grown on Si (001): theory and experiments
A set of recent results concerning lateral and vertical ordering of Ge islands grown on Si
(001) is reviewed. Experimental data generated by chemical vapour deposition and …
(001) is reviewed. Experimental data generated by chemical vapour deposition and …
Accurate and analytical strain map** at the surface of Ge/Si (0 0 1) islands by an improved flat-island approximation
We propose an extension of the well-known flat-island approximation in (1+ 1) dimensions
which, while kee** simple analytical relations, allows one to better describe the strain field …
which, while kee** simple analytical relations, allows one to better describe the strain field …
GeSi intermixing in Ge nanostructures on Si (111): An XAFS versus STM study
We report a detailed investigation of interdiffusion processes that occur during the growth of
germanium nanostructures on the (111)-oriented surface of silicon. In particular, X-ray …
germanium nanostructures on the (111)-oriented surface of silicon. In particular, X-ray …
Growth of heavily doped monocrystalline and polycrystalline SiGe-based quantum dot superlattices
D Hauser, G Savelli, M Plissonnier, L Montès, J Simon - Thin Solid Films, 2012 - Elsevier
Various SiGe-based Quantum Dot Superlattices (QDSLs) were grown using an industrial
Chemical Vapor Deposition tool with the intent to develop efficient thermoelectric thin films at …
Chemical Vapor Deposition tool with the intent to develop efficient thermoelectric thin films at …