Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages
over traditional Si-based semiconductors in terms of high-power and high-frequency …

Two-dimensional semiconductors such as monolayer MoS2 are of interest for future
applications including flexible electronics and end-of-roadmap technologies. Most research …

Thermal performance characteristics of fin-shaped FETs (FinFETs) are studied and analyzed
in this paper for sub-22-nm technologies using the well-calibrated TCAD simulations. In this …

In this paper, self-heating effects (SHEs) in three-stacked nanoplate FETs were investigated
through the TCAD simulation. In order to obtain high reliability, the evaluation of SHEs was …

In the deep submicron regime, FinFET successfully suppresses the leakage current using a
3D fin-like channel substrate, which gets depleted and blocks possible leakage as the gate …

NFinFET transistors with various fin widths (110 nm, 115 nm, and 120 nm) are put into
measurements, and the data are collected. By using the modified model, the measure data …

Current–voltage characteristic curves of NFinFET are presented and fitted with modified
current–voltage (IV) formulas, where the modified term in the triode region is demonstrated …

Self-heating effects (SHEs) of bulk and SOI FETs including 6-nm ultra-thin (UT) BOX devices
are systematically investigated and compared using the four-terminal gate resistance …

We demonstrate clear self-heating effects (SHEs) of bulk and silicon-on-insulator (SOI)
MOSFETs for various SOI/buried oxide (BOX) thicknesses including ultra-thin 6 nm BOX …

We performed electron counting statistics to measure the thermoelectric effect in a
nanometer-scale silicon dot. To separate the 100-nmlong dot from a silicon nanowire, we …