Absorption coefficient and relative refractive index change for a double δ-doped GaAs MIGFET-like structure: Electric and magnetic field effects
JC Martínez-Orozco, KA Rodríguez-Magdaleno… - Superlattices and …, 2016 - Elsevier
In this work we present theoretical results for the electronic structure as well as for the
absorption coefficient and relative refractive index change for an asymmetric double δ …
absorption coefficient and relative refractive index change for an asymmetric double δ …
Intersubband linear and nonlinear optical response of the delta-doped SiGe quantum well
The degree of ionization, controlled by external fields, of delta-doped layers inside the
quantum wells can affect their energy structure, therefore delta-doped QWs can be used to …
quantum wells can affect their energy structure, therefore delta-doped QWs can be used to …
About possible THz modulator on the base of delta-doped QWs
The idea about a new type of THz modulator, based on the dependence of separation
between space quantized energy levels in a quantum well (QW) on the degree of ionization …
between space quantized energy levels in a quantum well (QW) on the degree of ionization …
On intersubband absorption of radiation in delta-doped QWs
The results of calculation of intersubband absorption coefficients for either center-, or edge-
delta-doped with Phosphorus 10 nm and 20 nm-wide Si 0.8 Ge 0.2/Si/Si 0.8 Ge 0.2 quantum …
delta-doped with Phosphorus 10 nm and 20 nm-wide Si 0.8 Ge 0.2/Si/Si 0.8 Ge 0.2 quantum …
Background impurities and a delta-doped QW. Part I: Center do**
The influence of shallow background donor impurities on the energy characteristics of the
SiGe/Si/SiGe quantum well structure with centered delta-do** is studied numerically. The …
SiGe/Si/SiGe quantum well structure with centered delta-do** is studied numerically. The …
Hydrogenic impurity states in a delta-layer within quantum wells in a transversal electric field
The effect of a transversal electric field on the impurity binding energy and the energy
differences between the space-quantized subbands of center delta-doped SiGe/Si quantum …
differences between the space-quantized subbands of center delta-doped SiGe/Si quantum …
Intersubband Energy Differences of Delta-Doped Quantum Wells in External Electric Field
The energy differences between subbands of a semiconductor quantum well delta-doped
inside the well can be tuned by electronic temperature. The effect can be used in a novel …
inside the well can be tuned by electronic temperature. The effect can be used in a novel …
Electron Tunneling in Heterostructures with Germanium Quantum Dots
SI Pokytnyi, VY Gayvoronsky - … Applications: Selected Proceedings of the IX …, 2023 - Springer
It is shown that electron tunneling through a potential barrier that separates two quantum
dots of germanium leads to the splitting of electron states localized over spherical interfaces …
dots of germanium leads to the splitting of electron states localized over spherical interfaces …
Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n‐type δ‐doped QW
Additional (residual) impurities in the barriers change the energy profile of a quantum well.
This means that they alter the ionization energy for the impurity delta layer situated within the …
This means that they alter the ionization energy for the impurity delta layer situated within the …
Background impurities in a delta-doped QW. Part II: Edge do**
This is the second part of our study of the background impurity influence on the intersubband
energy structure of a single SiGe/Si/SiGe quantum well with the impurity delta layer within …
energy structure of a single SiGe/Si/SiGe quantum well with the impurity delta layer within …