Memristive crossbar arrays for storage and computing applications
The emergence of memristors with potential applications in data storage and artificial
intelligence has attracted wide attentions. Memristors are assembled in crossbar arrays with …
intelligence has attracted wide attentions. Memristors are assembled in crossbar arrays with …
[HTML][HTML] Advanced synaptic devices and their applications in biomimetic sensory neural system
Human nervous system, which is composed of neuron and synapse networks, is capable of
processing information in a plastic, data-parallel, fault-tolerant, and energy-efficient …
processing information in a plastic, data-parallel, fault-tolerant, and energy-efficient …
Realization of boolean logic functionality using redox‐based memristive devices
A Siemon, T Breuer, N Aslam, S Ferch… - Advanced functional …, 2015 - Wiley Online Library
Emerging resistively switching devices are thought to enable ultradense passive
nanocrossbar arrays for use as random access memories (ReRAM) by the end of the …
nanocrossbar arrays for use as random access memories (ReRAM) by the end of the …
A complementary resistive switch-based crossbar array adder
Redox-based resistive switching devices (ReRAM) are an emerging class of nonvolatile
storage elements suited for nanoscale memory applications. In terms of logic operations …
storage elements suited for nanoscale memory applications. In terms of logic operations …
Implementation of complete Boolean logic functions in single complementary resistive switch
S Gao, F Zeng, M Wang, G Wang, C Song, F Pan - Scientific reports, 2015 - nature.com
The unique complementary switching behaviour of complementary resistive switches
(CRSs) makes them very attractive for logic applications. The implementation of complete …
(CRSs) makes them very attractive for logic applications. The implementation of complete …
Memristive crypto primitive for building highly secure physical unclonable functions
Physical unclonable functions (PUFs) exploit the intrinsic complexity and irreproducibility of
physical systems to generate secret information. The advantage is that PUFs have the …
physical systems to generate secret information. The advantage is that PUFs have the …
Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses
Investigating the promising chalcogenide materials for the development of memory and
advanced neuromorphic computing applications is a critical step in realizing electronic …
advanced neuromorphic computing applications is a critical step in realizing electronic …
Design of CMOS Compatible, High‐Speed, Highly‐Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2/Al2O3/TiOx …
Complementary resistive switching (CRS) is a suitable approach to minimize the sneak
leakage paths through a large resistive random access memory (RRAM) array. Here, an …
leakage paths through a large resistive random access memory (RRAM) array. Here, an …
Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM)
We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based
resistive switching memory device that reversibly changes its switching mode between …
resistive switching memory device that reversibly changes its switching mode between …
Electrochemical processes and device improvement in conductive bridge RAM cells
In this paper, we discuss the recent progress on the fundamental understandings of
ECM/CBRAM cells but also on the improved device structures and reliability for high‐density …
ECM/CBRAM cells but also on the improved device structures and reliability for high‐density …