Memristive crossbar arrays for storage and computing applications

H Li, S Wang, X Zhang, W Wang… - Advanced Intelligent …, 2021 - Wiley Online Library
The emergence of memristors with potential applications in data storage and artificial
intelligence has attracted wide attentions. Memristors are assembled in crossbar arrays with …

[HTML][HTML] Advanced synaptic devices and their applications in biomimetic sensory neural system

Y Sun, J Li, S Li, Y Jiang, E Wan, J Zhang, Y Shi, L Pan - Chip, 2023 - Elsevier
Human nervous system, which is composed of neuron and synapse networks, is capable of
processing information in a plastic, data-parallel, fault-tolerant, and energy-efficient …

Realization of boolean logic functionality using redox‐based memristive devices

A Siemon, T Breuer, N Aslam, S Ferch… - Advanced functional …, 2015 - Wiley Online Library
Emerging resistively switching devices are thought to enable ultradense passive
nanocrossbar arrays for use as random access memories (ReRAM) by the end of the …

A complementary resistive switch-based crossbar array adder

A Siemon, S Menzel, R Waser… - IEEE journal on emerging …, 2015 - ieeexplore.ieee.org
Redox-based resistive switching devices (ReRAM) are an emerging class of nonvolatile
storage elements suited for nanoscale memory applications. In terms of logic operations …

Implementation of complete Boolean logic functions in single complementary resistive switch

S Gao, F Zeng, M Wang, G Wang, C Song, F Pan - Scientific reports, 2015 - nature.com
The unique complementary switching behaviour of complementary resistive switches
(CRSs) makes them very attractive for logic applications. The implementation of complete …

Memristive crypto primitive for building highly secure physical unclonable functions

Y Gao, DC Ranasinghe, SF Al-Sarawi, O Kavehei… - Scientific reports, 2015 - nature.com
Physical unclonable functions (PUFs) exploit the intrinsic complexity and irreproducibility of
physical systems to generate secret information. The advantage is that PUFs have the …

Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses

A Ali, H Abbas, M Hussain, SHA Jaffery, S Hussain… - Nano Research, 2022 - Springer
Investigating the promising chalcogenide materials for the development of memory and
advanced neuromorphic computing applications is a critical step in realizing electronic …

Design of CMOS Compatible, High‐Speed, Highly‐Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2/Al2O3/TiOx …

W Banerjee, X Zhang, Q Luo, H Lv, Q Liu… - Advanced Electronic …, 2018 - Wiley Online Library
Complementary resistive switching (CRS) is a suitable approach to minimize the sneak
leakage paths through a large resistive random access memory (RRAM) array. Here, an …

Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM)

T Kim, H Son, I Kim, J Kim, S Lee, JK Park, JY Kwak… - Scientific Reports, 2020 - nature.com
We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based
resistive switching memory device that reversibly changes its switching mode between …

Electrochemical processes and device improvement in conductive bridge RAM cells

L Goux, I Valov - physica status solidi (a), 2016 - Wiley Online Library
In this paper, we discuss the recent progress on the fundamental understandings of
ECM/CBRAM cells but also on the improved device structures and reliability for high‐density …