Review of Ga2O3-based optoelectronic devices
Abstract Gallium oxide (Ga 2 O 3), with an ultrawide-bandgap of~ 4.9 eV, has attracted
recently much scientific and technological attention due to its extensive future applications in …
recently much scientific and technological attention due to its extensive future applications in …
β-Ga2O3 for wide-bandgap electronics and optoelectronics
Z Galazka - Semiconductor Science and Technology, 2018 - iopscience.iop.org
Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …
semiconducting oxide, which attracted recently much scientific and technological attention …
[HTML][HTML] Growth of bulk β-Ga2O3 single crystals by the Czochralski method
Z Galazka - Journal of Applied Physics, 2022 - pubs.aip.org
The present Tutorial provides a description of the growth of bulk β-Ga 2 O 3 single crystals
by the Czochralski method with a focus on the critical growth aspects. In particular, it details …
by the Czochralski method with a focus on the critical growth aspects. In particular, it details …
Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications
X Hou, Y Zou, M Ding, Y Qin, Z Zhang… - Journal of Physics D …, 2020 - iopscience.iop.org
Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due
to its critical applications, especially in safety and space detection. A DUV photodetector …
to its critical applications, especially in safety and space detection. A DUV photodetector …
Recent progress on the effects of impurities and defects on the properties of Ga 2 O 3
Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
Ga 2 O 3 polymorphs: tailoring the epitaxial growth conditions
Gallium oxide is a wide bandgap n-type semiconductor highly interesting for optoelectronic
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …
Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques
Heteroepitaxial films of Ga O were grown on c-plane sapphire (0001). The stable phase β-
Ga O was grown using the metalorganic chemical vapor deposition technique, regardless of …
Ga O was grown using the metalorganic chemical vapor deposition technique, regardless of …
Oxygen vacancies modulating the photodetector performances in ε-Ga 2 O 3 thin films
By acting as the trap** centers during charge carrier transfer, oxygen vacancy (VO) plays
a critical role in oxide photoelectric devices. Herein, a post-annealing method was …
a critical role in oxide photoelectric devices. Herein, a post-annealing method was …
State-of-the-Art β-Ga2O3 Field-Effect Transistors for Power Electronics
Due to the emergence of electric vehicles, power electronics have become the new focal
point of research. Compared to commercialized semiconductors, such as Si, GaN, and SiC …
point of research. Compared to commercialized semiconductors, such as Si, GaN, and SiC …
Orthorhombic undoped κ-Ga 2 O 3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors
Photoelectronic properties of orthorhombic undoped κ-Ga2O3 epitaxial thin films, grown on
sapphire substrates by metal–organic vapour phase epitaxy, were evaluated under X-ray …
sapphire substrates by metal–organic vapour phase epitaxy, were evaluated under X-ray …