Abstract Gallium oxide (Ga 2 O 3), with an ultrawide-bandgap of~ 4.9 eV, has attracted
recently much scientific and technological attention due to its extensive future applications in …

Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …

The present Tutorial provides a description of the growth of bulk β-Ga 2 O 3 single crystals
by the Czochralski method with a focus on the critical growth aspects. In particular, it details …

Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due
to its critical applications, especially in safety and space detection. A DUV photodetector …

Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …

Heteroepitaxial films of Ga O were grown on c-plane sapphire (0001). The stable phase β-
Ga O was grown using the metalorganic chemical vapor deposition technique, regardless of …

Due to the emergence of electric vehicles, power electronics have become the new focal
point of research. Compared to commercialized semiconductors, such as Si, GaN, and SiC …

Gallium oxide is a wide bandgap n-type semiconductor highly interesting for optoelectronic
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …

By acting as the trap** centers during charge carrier transfer, oxygen vacancy (VO) plays
a critical role in oxide photoelectric devices. Herein, a post-annealing method was …

High‐entropy alloys (HEAs) composed of multiprincipal elements with near‐equiatomic ratio
have gained numerous attention in recent years. The design concept and unique …