Adjusting the catalytic activity of C2N/SiH heterojunction for water splitting: A first-principles study
S Han, X Wei, Y Huang, J Zhang, J Yang - Applied Surface Science, 2022 - Elsevier
The development and design of environmentally friendly, low-cost catalysts for water
splitting is one of the most promising methods to solve current environmental problems. The …
splitting is one of the most promising methods to solve current environmental problems. The …
Tunable self‐powered n‐SrTiO3 photodetectors based on varying CuS‐ZnS nanocomposite film (p‐CuZnS, p‐CuS, and n‐ZnS)
Y Zhang, X Xu, X Fang - InfoMat, 2019 - Wiley Online Library
The heterojunction photodetector between n‐SrTiO3 (n‐STO) and p‐CuS‐ZnS (p‐CZS) is
prepared by a simple chemical bath deposition. The p‐CZS/n‐STO photodetector exhibits …
prepared by a simple chemical bath deposition. The p‐CZS/n‐STO photodetector exhibits …
Stress-driven nucleation of three-dimensional crystal islands: from quantum dots to nanoneedles
We study theoretically new effects during the stress-driven nucleation of three-dimensional
(3D) crystal islands in lattice mismatched material systems. It is shown that the formation …
(3D) crystal islands in lattice mismatched material systems. It is shown that the formation …
Epitaxial systems combining oxides and semiconductors
Oxides form a class of material, which covers almost all the spectra of functionalities:
dielectric, semiconductor, metallic, superconductor, optically nonlinear, piezoelectric …
dielectric, semiconductor, metallic, superconductor, optically nonlinear, piezoelectric …
Domain Matching Epitaxial Growth of In2O3 Thin Films on α-Al2O3(0001)
Oxygen plasma assisted molecular beam epitaxy was used to grow thin films of In2O3 on α-
Al2O3 (0001) over a range of substrate temperatures between 300 and 750° C. The crystal …
Al2O3 (0001) over a range of substrate temperatures between 300 and 750° C. The crystal …
Crystalline GaAs thin film growth on a c-plane sapphire substrate
Crystalline zinc blende GaAs has been grown on a trigonal c-plane sapphire substrate by
molecular beam epitaxy. The initial stage of GaAs thin film growth has been investigated …
molecular beam epitaxy. The initial stage of GaAs thin film growth has been investigated …
Determination of III-V/Si absolute interface energies: impact on wetting properties
Here, we quantitatively determine the impact of III-V/Si interface atomic configuration on the
wetting properties of the system. Based on a description at the atomic scale using density …
wetting properties of the system. Based on a description at the atomic scale using density …
On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates
The microstructure of nonpolar heteroepitaxial wurtzite films (GaN and ZnO-based) is
dominated by the presence of planar basal stacking faults (BSFs). In this paper, transmission …
dominated by the presence of planar basal stacking faults (BSFs). In this paper, transmission …
Evidence for the formation of two phases during the growth of SrTi on silicon
Epitaxial SrTi O 3 (STO)/Si templates open a unique opportunity for the integration of
ferroelectric oxides, such as BaTi O 3 on silicon and for the realization of new devices …
ferroelectric oxides, such as BaTi O 3 on silicon and for the realization of new devices …
Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate
Optical properties of wurtzite InP/InAs/InP core–shell nanowires grown on silicon substrates
by solid source molecular beam epitaxy are studied by means of photoluminescence and …
by solid source molecular beam epitaxy are studied by means of photoluminescence and …