Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

J Yang, K Liu, X Chen, D Shen - Progress in Quantum Electronics, 2022 - Elsevier
Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …

[HTML][HTML] Growth of bulk β-Ga2O3 single crystals by the Czochralski method

Z Galazka - Journal of Applied Physics, 2022 - pubs.aip.org
The present Tutorial provides a description of the growth of bulk β-Ga 2 O 3 single crystals
by the Czochralski method with a focus on the critical growth aspects. In particular, it details …

Ultrawide-bandgap semiconductors: An overview

MH Wong, O Bierwagen, RJ Kaplar… - Journal of Materials …, 2021 - Springer
Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …

Luminescence Temperature Quenching in Mn2+ Phosphors

AJ van Bunningen, AD Sontakke… - Advanced Optical …, 2023 - Wiley Online Library
Narrower band red and green emission in phosphor‐converted white light‐emitting diodes
(wLEDs) can improve the efficacy and color gamut in lighting and display applications. A …

p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics

E Chikoidze, C Sartel, I Madaci… - Crystal Growth & …, 2020 - ACS Publications
The family of spinel compounds is a large and important class of multifunctional materials of
general formulation AB2X4 with many advanced applications in energy and optoelectronic …

A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors

W Nunn, TK Truttmann, B Jalan - Journal of materials research, 2021 - Springer
Much progress has been made in the area of wide bandgap semiconductors for applications
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …

Performance enhancement of a self-powered solar-blind UV photodetector based on ZnGa2O4/Si heterojunction via interface pyroelectric effect

D Han, K Liu, X Chen, B Li, T Zhai, L Liu… - Applied Physics …, 2021 - pubs.aip.org
The photodetectors based on the wide bandgap semiconductor (WBS)/Si heterojunction
have attracted more and more attention in recent years due to their excellent photoelectric …

SrNbO3 as a transparent conductor in the visible and ultraviolet spectra

Y Park, J Roth, D Oka, Y Hirose, T Hasegawa… - Communications …, 2020 - nature.com
Few materials have been identified as high-performance transparent conductors in the
visible regime (400–700 nm). Even fewer conductors are known to be transparent in …

Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides

Z Galazka, S Ganschow, K Irmscher, D Klimm… - Progress in Crystal …, 2021 - Elsevier
In the course of development of transparent semiconducting oxides (TSOs) we compare the
growth and basic physical properties bulk single crystals of ultra-wide bandgap (UWBG) …