GaN nanostructures hold significant promise in advancing nanoscale light‐emitting devices.
However, significant progress remains elusive, possibly due to the absence of innovative …

As a typical representative of the third-generation semiconductor materials, GaN is an ideal
substrate for the fabrication of blue-green lasers, RF microwave devices, and power …

In this research, we compared the performance of commercial μ-LEDs and three-layered
staggered QW μ-LED arrays. We also investigated the self-heating effect. We proposed a …

Herein, we proposed a unique structural design for indium gallium nitride (InGaN) based
blue resonant cavity micro-light-emitting diodes (RC-μ-LEDs), focusing on the design …

To improve the efficiency of light extraction, the vertical-oriented nanoporous (NP) GaN film
as scattering medium as well as light-coupling component was prepared by electrochemical …

Non-planar morphology is a common feature of devices applied in various physical fields,
such as light or fluid, which pose a great challenge for surface nano-patterning to improve …

Embedding p-type gallium nitride (p-GaN) with controlled Mg out-diffusion in adjacent
epitaxial layers is a key for designing various multi-junction structures with high precision …

We report a systematic electrochemical study that allows fine-tuning of the pore formation
process in gallium nitride (GaN). We have investigated several parameters of pore …

During the past decades, group-III nitrides have emerged as a new impetus for the
development of semiconductor industry and attracted significant attentions in different fields …

A novel flexible polishing process has been developed for sapphire wafer by using a
polishing plate with a rigid-flexible composite structure to satisfy the demands of excellent …