State of the art and future perspectives in advanced CMOS technology
The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …
historical end point and we observe that the semiconductor industry is driving …
New structure transistors for advanced technology node CMOS ICs
Q Zhang, Y Zhang, Y Luo, H Yin - National Science Review, 2024 - academic.oup.com
Over recent decades, advancements in complementary metal-oxide-semiconductor
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …
Characterization and optimization of junctionless gate-all-around vertically stacked nanowire FETs for sub-5 nm technology nodes
In this paper, for the first time, we have investigated the DC, analog/RF, and linearity metrics
of asymmetric spacer junctionless (JL) Gate-All-Around (GAA) vertically stacked nanowire …
of asymmetric spacer junctionless (JL) Gate-All-Around (GAA) vertically stacked nanowire …
Ferroelectric vertical gate-all-around field-effect-transistors with high speed, high density, and large memory window
W Huang, H Zhu, Y Zhang, X Yin, X Ai… - IEEE Electron …, 2021 - ieeexplore.ieee.org
Ferroelectric vertical gate-all-around field-effect-transistor (Fe-VGAAFET) suits a memory
cell with a 5 nm technology node and beyond since it is less constrained by gate length …
cell with a 5 nm technology node and beyond since it is less constrained by gate length …
Opportunities and challenges in designing and utilizing vertical nanowire FET (V-NWFET) standard cells for beyond 5 nm
T Song - IEEE Transactions on Nanotechnology, 2019 - ieeexplore.ieee.org
Nanowire field-effect transistors (NWFETs) are known to become the emerging transistor
type for better performance and low power for future technology nodes beyond 7 nm. Their …
type for better performance and low power for future technology nodes beyond 7 nm. Their …
Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap
In this work, we will give an overview of the innovations in materials and new device
concepts that will be needed to continue Moore's law to the sub-10 nm technology nodes. To …
concepts that will be needed to continue Moore's law to the sub-10 nm technology nodes. To …
Quantum mechanical analytical modeling of nanoscale DG FinFET: evaluation of potential, threshold voltage and source/drain resistance
Two-dimensional (2D) quantum mechanical analytical modeling has been presented in
order to evaluate the 2D potential profile within the active area of FinFET structure. Various …
order to evaluate the 2D potential profile within the active area of FinFET structure. Various …
Demonstration of Ge nanowire CMOS devices and circuits for ultimate scaling
In this paper, Ge nanowire (NW) CMOS devices and circuits are analyzed in detail. Various
experiment splits are studied, including device geometry parameters such as the channel …
experiment splits are studied, including device geometry parameters such as the channel …
Thermal-Aware Shallow Trench Isolation Design Optimization for Minimizing in Various Sub-10-nm 3-D Transistors
I Myeong, D Son, H Kim, M Kang… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
In this paper, we have devised on shallow trench isolation (STI) design considering leakage
current () in Bulk/silicon on insulator (SOI) FinFET and vertical FET (VFET). The tendency is …
current () in Bulk/silicon on insulator (SOI) FinFET and vertical FET (VFET). The tendency is …
Low-frequency noise reduction in vertical MOSFETs having tunable threshold voltage fabricated with 60 nm CMOS technology on 300 mm wafer process
T Imamoto, Y Ma, M Muraguchi… - Japanese Journal of …, 2015 - iopscience.iop.org
In this paper, DC and low-frequency noise (LFN) characteristics have been investigated with
actual measurement data in both n-and p-type vertical MOSFETs (V-MOSFETs) for the first …
actual measurement data in both n-and p-type vertical MOSFETs (V-MOSFETs) for the first …