White light‐emitting diodes: history, progress, and future
About twenty years ago, in the autumn of 1996, the first white light‐emitting diodes (LEDs)
were offered for sale. These then‐new devices ushered in a new era in lighting by …
were offered for sale. These then‐new devices ushered in a new era in lighting by …
Wet etching of GaN, AlN, and SiC: a review
D Zhuang, JH Edgar - Materials Science and Engineering: R: Reports, 2005 - Elsevier
The wet etching of GaN, AlN, and SiC is reviewed including conventional etching in
aqueous solutions, electrochemical etching in electrolytes and defect-selective chemical …
aqueous solutions, electrochemical etching in electrolytes and defect-selective chemical …
[BOOK][B] Light-emitting diodes (2018)
EF Schubert - 2018 - books.google.com
The 1st edition of the book “Light-Emitting Diodes” was published in 2003. The 2nd edition
was published in 2006. The current 3rd edition of the book, a substantial expansion of the …
was published in 2006. The current 3rd edition of the book, a substantial expansion of the …
[BOOK][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth
H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
Zinc oxide light-emitting diodes: a review
F Rahman - Optical Engineering, 2019 - spiedigitallibrary.org
This paper presents a compact survey of the various material schemes and device structures
that have been explored in the quest toward develo** light-emitting diodes (LEDs) based …
that have been explored in the quest toward develo** light-emitting diodes (LEDs) based …
Gallium nitride as an electromechanical material
Gallium nitride (GaN) is a wide bandgap semiconductor material and is the most popular
material after silicon in the semiconductor industry. The prime movers behind this trend are …
material after silicon in the semiconductor industry. The prime movers behind this trend are …
Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface
We report on an InGaN-based light-emitting diode (LED) with a top p-GaN surface
microroughened using the metal clusters as a wet etching mask. The light-output power for a …
microroughened using the metal clusters as a wet etching mask. The light-output power for a …
[HTML][HTML] Interplay between counter-surface chemistry and mechanical activation in mechanochemical removal of N-faced GaN surface in humid ambient
Mechanical activation in mechanical removal of GaN using diamond tip and
mechanochemical removal using Al 2 O 3 tip are described by the Archard equation and …
mechanochemical removal using Al 2 O 3 tip are described by the Archard equation and …
Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays
Vertically aligned InGaN/GaN nanorod light emitting diode (LED) arrays were created from
planar LED structures using a new top-down fabrication technique consisting of a plasma …
planar LED structures using a new top-down fabrication technique consisting of a plasma …
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …