Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …

; 124, 219906 (2006)]} XC functional. The band gap of InGaN alloys as a function of In
content is calculated and a strong bowing at low In content is found, described by bowing …

Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs)
grown on sapphire and GaN substrates were investigated. Temperature-dependent …

The electronic band structures of In x Ga 1− x N, In x Al 1− x N, and In x Ga y Al 1− x− y N
alloys are calculated by ab initio methods using a supercell geometry, and the effects of …

In this paper we review the recent studies on wide InGaN quantum wells (QWs). InGaN QWs
are known to suffer from an extremely high built-in piezoelectric polarization, which …

Nitride-based light-emitting diodes (LEDs) are well known to suffer from a high built-in
electric field in the quantum wells (QWs). In this paper we determined to what extent the …

Discussion of band gap behavior based on first principles calculations of electronic band
structures for various short period nitride superlattices is presented. Binary superlattices, as …

Structural and electronic properties of hexagonal (h-) and cubic (c-) phase AlGaInN
quaternary alloys are investigated using a unified and accurate local-density approximation …

Using the example of III–V nitrides crystallizing in a wurtzite structure (GaN, AlN, and InN),
this review presents the special role of hydrostatic pressure in studying semiconductor …

We report first principles analysis of the band gap E g of ternary group-III nitride In x Ga 1− x
N in both the wurtzite and zincblende form, within the linear muffin-tin orbital (LMTO) density …