[HTML][HTML] III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications
Group-III nitrides and their alloys feature direct bandgaps covering a broad range of the
electromagnetic spectrum, making them a promising material system for various …
electromagnetic spectrum, making them a promising material system for various …
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
[BOOK][B] Nucleation theory and growth of nanostructures
VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
[HTML][HTML] GaN based nanorods for solid state lighting
S Li, A Waag - Journal of Applied Physics, 2012 - pubs.aip.org
In recent years, GaN nanorods are emerging as a very promising novel route toward devices
for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices …
for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices …
InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111) Si substrate
A Kikuchi, M Kawai, M Tada… - Japanese Journal of …, 2004 - iopscience.iop.org
Abstract GaN-nanocolumn-based InGaN/GaN multiple quantum disk (MQD) light-emitting
diodes (LEDs) with a novel columnar structure were fabricated on n-type (111) Si substrates …
diodes (LEDs) with a novel columnar structure were fabricated on n-type (111) Si substrates …
Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy
Wurtzite GaN nanocolumns are reproducibly grown by plasma-assisted molecular beam
epitaxy on Si (111) and c-sapphire substrates. The nanocolumns density and diameter (600 …
epitaxy on Si (111) and c-sapphire substrates. The nanocolumns density and diameter (600 …
Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays
K Kishino, H Sekiguchi, A Kikuchi - Journal of Crystal Growth, 2009 - Elsevier
The Ti-mask selective-area growth (SAG) of GaN nanocolumns was performed at the growth
temperature of 900° C, while decreasing the supplied nitrogen flow rate (QN2) from 3.5 to …
temperature of 900° C, while decreasing the supplied nitrogen flow rate (QN2) from 3.5 to …
Selective-area growth of GaN nanocolumns on Si (111) substrates for application to nanocolumn emitters with systematic analysis of dislocation filtering effect of …
K Kishino, S Ishizawa - Nanotechnology, 2015 - iopscience.iop.org
The growth of highly uniform arrays of GaN nanocolumns with diameters from 122 to 430 nm
on Si (111) substrates was demonstrated. The employment of GaN film templates with flat …
on Si (111) substrates was demonstrated. The employment of GaN film templates with flat …
N-polar GaN: Epitaxy, properties, and device applications
Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …
for high power switching, high power RF and lighting applications. In c-direction, depending …
Molecular beam epitaxy growth of GaN, AlN and InN
X Wang, A Yoshikawa - Progress in crystal growth and characterization of …, 2004 - Elsevier
III-Nitrides receive much research attention and obtain significant development due to their
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …