Silicon (Si) nano-electronics is advancing towards the end of the Moore's Law, as gate
lengths of just a few nanometers have been already reported in state-of-the-art transistors. In …

Following the rapid development of the electronics industry and technology, it is expected
that future electronic devices will operate based on functional units at the level of electrically …

In donor-atom Si transistors, donor-induced potential minima work as quantum dots (QDs)
giving rise to single-electron tunneling peaks at low temperatures. Until now, however …

Quantum transport in multi-channel silicon nanowire transistors presents enhanced data
capacity and driving ability by overlap** current, which are essential for constructing …

Control of coupling of dopant atoms in silicon nanostructures is a fundamental challenge for
dopant-based applications. However, it is difficult to find systems of only a few dopants that …

Coulomb-blockade transport via donors working as quantum dots (QDs) in Si nano-
transistor channels opens new pathways for atomic-level applications, but position-control of …

We investigate gate-regulated transition temperatures for electron hop** behaviours
through discrete ionized dopant atoms in silicon junctionless nanowire transistors. We …

It is a challenge to extract the energy sensitivity of charge carriers' transport and scattering
from experimental data, although a theoretical estimation in which the existing scattering …

Carbon nanotubes (CNTs) can be used as channel material in a nanoscale or microscale
gap between conducting electrodes. The contact potential of CNT-bundles deposited by …

We have recently reported single-electron tunneling (SET) via a-few-donor QDs at high
temperatures in high-concentration selectively-doped SOI-FETs. A central QD works by SET …