Reliability of GaN high-electron-mobility transistors: State of the art and perspectives
G Meneghesso, G Verzellesi, F Danesin… - … on Device and …, 2008 - ieeexplore.ieee.org
Failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are
reviewed. Data from three de-accelerated tests are presented, which demonstrate a close …
reviewed. Data from three de-accelerated tests are presented, which demonstrate a close …
Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
This article critically reviews the architectural novelties, emerging materials (substrate,
buffer, barrier & contact materials), technological advancements, processing techniques …
buffer, barrier & contact materials), technological advancements, processing techniques …
GaN-based RF power devices and amplifiers
UK Mishra, L Shen, TE Kazior… - Proceedings of the IEEE, 2008 - ieeexplore.ieee.org
The rapid development of the RF power electronics requires the introduction of wide
bandgap material due to its potential in high output power density, high operation voltage …
bandgap material due to its potential in high output power density, high operation voltage …
Deep traps in GaN-based structures as affecting the performance of GaN devices
New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …
to compensation and recombination in these materials are discussed. New results on …
Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film
An effective passivation technique for AlGaN/GaN high-electron-mobility transistors (HEMTs)
is presented. This technique features an AlN thin film grown by plasma-enhanced atomic …
is presented. This technique features an AlN thin film grown by plasma-enhanced atomic …
Electronic surface and dielectric interface states on GaN and AlGaN
GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …
devices; however, they are plagued by a high density of interface states that affect device …
Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs
Long-term ON-state and OFF-state high-electric-field stress results are presented for
unpassivated GaN/AlGaN/GaN high-electron-mobility transistors on SiC substrates …
unpassivated GaN/AlGaN/GaN high-electron-mobility transistors on SiC substrates …
[HTML][HTML] Al-rich AlGaN based transistors
AG Baca, AM Armstrong, BA Klein… - Journal of Vacuum …, 2020 - pubs.aip.org
Research results for AlGaN-channel transistors are reviewed as they have progressed from
low Al-content and long-channel devices to Al-rich and short-channel RF devices. Figure of …
low Al-content and long-channel devices to Al-rich and short-channel RF devices. Figure of …
210-GHz InAlN/GaN HEMTs with dielectric-free passivation
Lattice-matched depletion-mode InAlN/AlN/GaN high-electron mobility transistors (HEMTs)
on a SiC substrate were fabricated, for the first time, with a dielectric-free passivation (DFP) …
on a SiC substrate were fabricated, for the first time, with a dielectric-free passivation (DFP) …
Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN/GaN
HEMTs by comparing experimental data with numerical device simulations. Under power …
HEMTs by comparing experimental data with numerical device simulations. Under power …