Quantum dot nanostructures and molecular beam epitaxy
In order to fulfil the requirements of the information society there is a growing demand for
nanoelectronic devices with new or largely improved performances; these devices are …
nanoelectronic devices with new or largely improved performances; these devices are …
Temperature-dependent photoluminescence in light-emitting diodes
T Lu, Z Ma, C Du, Y Fang, H Wu, Y Jiang, L Wang… - Scientific reports, 2014 - nature.com
Abstract Temperature-dependent photoluminescence (TDPL), one of the most effective and
powerful optical characterisation methods, is widely used to investigate carrier transport and …
powerful optical characterisation methods, is widely used to investigate carrier transport and …
Effect of Different Sensitization Technique on the Photoconversion Efficiency of CdS Quantum Dot and CdSe Quantum Rod Sensitized TiO2 Solar Cells
The procedure employed for the sensitization of mesoporous photoanodes affects strongly
the final performance of sensitized devices, especially when semiconductor quantum dots …
the final performance of sensitized devices, especially when semiconductor quantum dots …
Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots
WH Chang, TM Hsu, CC Huang, SL Hsu, CY Lai… - Physical Review B, 2000 - APS
We present a temperature-and bias-dependent photocurrent study of the excitonic interband
transitions of InAs self-assembled quantum dots (QD's). It was found that the carrier escape …
transitions of InAs self-assembled quantum dots (QD's). It was found that the carrier escape …
Photovoltaic properties of Bi2S3 and CdS quantum dot sensitized TiO2 solar cells
Abstract Bismuth sulfide (Bi 2 S 3) is an attractive potential replacement for lead sulfide
(PbS) due to its low toxicity and near infrared absorption spectrum. In this work, we report the …
(PbS) due to its low toxicity and near infrared absorption spectrum. In this work, we report the …
Fine structure of charged and neutral excitons in InAs- quantum dots
Photoluminescence spectra from single self-assembled InAs quantum dots embedded in an
Al 0.6 Ga 0.4 As matrix are reported. The spectra consist of a higher-energy linearly …
Al 0.6 Ga 0.4 As matrix are reported. The spectra consist of a higher-energy linearly …
Temperature dependence of the photoluminescence emission from InAs quantum dots in a strained Ga0. 85In0. 15As quantum well
DP Popescu, PG Eliseev, A Stintz… - … science and technology, 2003 - iopscience.iop.org
Photoluminescence from InAs quantum dots in a strained Ga 0.85 In 0.15 As quantum well is
investigated over a temperature range from 10 to 300 K using low intensity optical excitation …
investigated over a temperature range from 10 to 300 K using low intensity optical excitation …
Enhancement of efficiency in quantum dot sensitized solar cells based on CdS/CdSe/CdSeTe heterostructure by improving the light absorption in the VIS-NIR region
In this work, we demonstrate an enhancement of photocurrent in QDSSCs based on CdS
(QDs)/CdSe Quantum rods (QRs)/CdSeTe (QDs) heterostructure due to the increased …
(QDs)/CdSe Quantum rods (QRs)/CdSeTe (QDs) heterostructure due to the increased …
InAs/AlGaAs quantum dots for single-photon emission in a red spectral range
We report on comparative optical studies of InAs/Al0. 44Ga0. 56As quantum dots (QDs)
grown by molecular beam epitaxy either with or without a thin GaAs interlayer inserted …
grown by molecular beam epitaxy either with or without a thin GaAs interlayer inserted …
One-dimensional miniband formation in closely stacked InAs/GaAs quantum dots
A Takahashi, T Ueda, Y Bessho, Y Harada, T Kita… - Physical Review B …, 2013 - APS
We have studied the electronic states of closely stacked InAs/GaAs quantum dots (QDs) with
a 4.0-nm spacer layer using linearly polarized photoluminescence (PL) and time-resolved …
a 4.0-nm spacer layer using linearly polarized photoluminescence (PL) and time-resolved …