Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

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[HTML][HTML] Piezoelectric materials for flexible and wearable electronics: A review

Y Wu, Y Ma, H Zheng, S Ramakrishna - Materials & Design, 2021 - Elsevier
Self-powered devices and micro-sensors are in high demand for intelligent electronics and
flexible wearables for applications in medical healthcare and human–computer interactive …
Mentés Hivatkozás Idézetek száma: 339 Kapcsolódó cikkek Mind a(z) 4 változat
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A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …

JA Spencer, AL Mock, AG Jacobs, M Schubert… - Applied Physics …, 2022 - pubs.aip.org
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
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[HTML][HTML] β-Gallium oxide power electronics

AJ Green, J Speck, G ** properties of Ga2O3
J Zhang, J Shi, DC Qi, L Chen, KHL Zhang - APL Materials, 2020 - pubs.aip.org
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
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Review of Ga2O3-based optoelectronic devices

D Guo, Q Guo, Z Chen, Z Wu, P Li, W Tang - Materials Today Physics, 2019 - Elsevier
Abstract Gallium oxide (Ga 2 O 3), with an ultrawide-bandgap of~ 4.9 eV, has attracted
recently much scientific and technological attention due to its extensive future applications in …
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Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers

JS Li, CC Chiang, X ** and Defects in β-Ga2O3
MJ Tadjer, JL Lyons, N Nepal, JA Freitas… - ECS Journal of Solid …, 2019 - iopscience.iop.org
Gallium oxide (β-Ga 2 O 3) is an emerging semiconductor with relevant properties for power
electronics, solar-blind photodetectors, and some sensor applications due to its ultra-wide …
Mentés Hivatkozás Idézetek száma: 233 Kapcsolódó cikkek Mind a(z) 3 változat