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Self-assembled InAs quantum wire lasers on (001) InP at 1.6 μm
In this work, the authors present results on the growth by atomic layer molecular beam
epitaxy and characterization of lasers with one and three stacked layers of InAs quantum …
epitaxy and characterization of lasers with one and three stacked layers of InAs quantum …
Improvement of the Temperature Characteristic of 1.3 µm GaInAsP Laser Diodes with GaInAsP/InP Short-Period Superlattice Barriers
PA Postigo, D Golmayo, H Gómez… - Japanese journal of …, 2002 - iopscience.iop.org
We report on the characteristics of tensile-strained 1.3 µm InGaAsP multi-quantum well
lasers with InP/GaInAsP short-period superlattices (SPSLs) in barriers and waveguide …
lasers with InP/GaInAsP short-period superlattices (SPSLs) in barriers and waveguide …
P-type InP grown at low temperatures by atomic layer molecular beam epitaxy (ALMBE)
Residual do** of InP layers grown at low temperature by atomic layer molecular beam
epitaxy (ALMBE) has been reduced down to ̃1016cm-3 by control of phosphorus pulses, and …
epitaxy (ALMBE) has been reduced down to ̃1016cm-3 by control of phosphorus pulses, and …
Electrical and optical properties of Be-doped InP grown at low temperature by solid source atomic layer molecular beam epitaxy
Beryllium-doped InP layers have been grown by solid source atomic layer molecular beam
epitaxy at low substrate temperature. The residual n-type do** was reduced by controlling …
epitaxy at low substrate temperature. The residual n-type do** was reduced by controlling …
Self-limiting growth conditions on (001) InP by alternate triethylindium and tertiarybutylphosphine supply in ultrahigh vacuum
N Otsuka, J Nishizawa, H Kikuchi… - Journal of Vacuum …, 1999 - pubs.aip.org
Alternate injections of triethylindium (TEI) and tertiarybutylphosphine (TBP) without
precracking were used to realize self-limiting growth of an InP layer on a (001) InP substrate …
precracking were used to realize self-limiting growth of an InP layer on a (001) InP substrate …
Self-limiting growth of InP by alternate trimethylindium and tertiarybutylphosphine supply in ultrahigh vacuum
N Otsuka, J Nishizawa, H Kikuchi, Y Oyama - Journal of crystal growth, 1999 - Elsevier
The alternate injection of trimethylindium (TMI) and tertiarybutylphosphine (TBP) without
precracking was studied to expand the self-limiting growth conditions of an InP layer on a …
precracking was studied to expand the self-limiting growth conditions of an InP layer on a …
Self-Limiting Growth of Specular InP Layer by Alternate Injection of Triethylindium and Tertiarybutylphosphine in Ultrahigh Vacuum
N Otsuka, J Nishizawa, H Kikuchi… - Japanese journal of …, 1999 - iopscience.iop.org
Alternate injection of triethylindium (TEI) and tertiarybutylphosphine without precracking has
been studied to realize low-temperature growth of an InP layer on an (001) InP substrate in …
been studied to realize low-temperature growth of an InP layer on an (001) InP substrate in …
InP tunnel junctions grown by atomic layer molecular beam epitaxy on InP and InP-on-Si substrates
p++/n++ InP tunnel diodes have been fabricated for the first time on InP and Si substrates by
solid source Atomic Layer Molecular Beam Epitaxy (ALMBE) at low temperature. The high …
solid source Atomic Layer Molecular Beam Epitaxy (ALMBE) at low temperature. The high …
Analysis of local deformations in heterostructures containing short period superlattices by high-resolution transmission electron microscopy
This work describes the application of the Lattice Fringe Spacing Measurement (LFSM)
method to the study of complex multiquantum well heterostructures containing both low …
method to the study of complex multiquantum well heterostructures containing both low …
Self-limiting submonolayer growth of InP by alternative triethylindium and tertiarybutylphosphine supply in ultra high vacuum
N Otsuka, J Nishizawab, H Kikuchib… - Compound …, 2021 - taylorfrancis.com
Alternative injection of triethylindium and tertiarybutylphosphine without pre-cracking has
been used for molecular layer epitaxy to realize a monolayer growth of InP. The growth rate …
been used for molecular layer epitaxy to realize a monolayer growth of InP. The growth rate …