Cubic nitrides are candidate materials for next-generation optoelectronic applications as
they possess no internal fields and promise to cover large parts of the electromagnetic …

3C-SiC is a promising semiconductor for many applications where do** and heat
dissipation are fundamental parameters in the device design. However, the variation of …

The cubic form of SiC (β-or 3C-) compared to the hexagonal α-SiC polytypes, primarily 4H-
and 6H–SiC, has lower growth cost and can be grown heteroepitaxially in large area silicon …

The composites made from cubic silicon carbide (3C-SiC), as a matrix, and carbon
nanotubes (CNTs), as reinforcements, have a wide range of applications in the industry …

A series of silver-doped β-SiC/graphene nanoparticles (NPs) were systematically
synthesized via solid-state reactions, aiming to optimize electrical conductivity, heightening …

The elastic‐plastic deformation of 3C‐SiC thin film was investigated by a nanoindenter
equipped with the Berkovich tip. Transition from pure elastic to elastic‐plastic deformation …

Cubic silicon carbide (3C-SiC) films were grown by pulsed laser deposition (PLD) on
magnesium oxide [MgO (100)] substrates at a substrate temperature of 800° C. Besides, p …

Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on
the reliability of SiO 2 layers on 3C-SiC, which is crucial in power MOS device …

Exploration of spin defects in semiconductors for possible qubits encourages the
development of the quantum field. Silicon carbide (SiC) is a suitable platform to carry spin …

SiC power MOSFETs are called to replace Si IGBT for some medium and high power
applications (hundreds of kVA). However, even if crystallographic defects have been …