Thin film transistor and method of manufacturing thin film transistor
K Tokunaga - US Patent App. 12/557,212, 2010 - Google Patents
The present invention provides a thin film transistor including: a channel layer mainly
containing a conductive oxide semiconductor; a pair of electrodes on the channel layer; and …
containing a conductive oxide semiconductor; a pair of electrodes on the channel layer; and …
Amorphous oxide and thin film transistor
The present invention relates to an amorphous oxide and a thin film transistor using the
amorphous oxide. In particular, the present invention provides an amorphous oxide having …
amorphous oxide. In particular, the present invention provides an amorphous oxide having …
Amorphous oxide and thin film transistor
The present invention relates to an amorphous oxide and a thin film transistor using the
amorphous oxide. In particular, the present invention provides an amorphous oxide having …
amorphous oxide. In particular, the present invention provides an amorphous oxide having …
Thin film transistors and methods of manufacturing the same
Conventional televisions (TV) displays may be required to satisfy several market
requirements such as relatively large size, digital information display (DID), reduced cost …
requirements such as relatively large size, digital information display (DID), reduced cost …
Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor
Provided are a thin film transistor (TFT) including a selec tively crystallized channel layer,
and a method of manufac turing the TFT. The TFT includes a gate, the channel layer, a …
and a method of manufac turing the TFT. The TFT includes a gate, the channel layer, a …
Semiconductor device with an active layer containing zinc oxide, manufacturing method, and electronic device
T Sugihara, H Ohno, M Kawasaki - US Patent 8,093,589, 2012 - Google Patents
In a thin film transistor (1), a gate insulating layer (4) is formed on a gate electrode (3) formed
on an insulating substrate (2). Formed on the gate insulating layer (4) is a semiconductor …
on an insulating substrate (2). Formed on the gate insulating layer (4) is a semiconductor …
Transistor using an isovalent semiconductor oxide as the active channel layer
RL Hoffman, GS Herman - US Patent 7,462,862, 2008 - Google Patents
US7462862B2 - Transistor using an isovalent semiconductor oxide as the active channel layer
- Google Patents US7462862B2 - Transistor using an isovalent semiconductor oxide as the …
- Google Patents US7462862B2 - Transistor using an isovalent semiconductor oxide as the …
Semiconductor Device
RL Hoffman, GS Herman… - US Patent App. 11 …, 2008 - Google Patents
US20080254569A1 - Semiconductor Device - Google Patents US20080254569A1 -
Semiconductor Device - Google Patents Semiconductor Device Download PDF Info …
Semiconductor Device - Google Patents Semiconductor Device Download PDF Info …
Semiconductor device including zinc oxide containing semiconductor film
K Akimoto - US Patent 8,134,156, 2012 - Google Patents
To provide a semiconductor device in which a defect or fault is not generated and a
manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to …
manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to …
Amorphous Oxide And Thin Film Transistor
The present invention relates to an amorphous oxide and a thin film transistor using the
amorphous oxide. In particular, the present invention provides an amorphous oxide having …
amorphous oxide. In particular, the present invention provides an amorphous oxide having …