Described herein are apparatus comprising one or more silicon-containing layers and a
metal oxide layer. Also described herein are methods for forming one or more silicon …

In the above-described thin film transistor, there is a case where deterioration of TFT
characteristics occurs due to oxygen loss. In the case where such deterioration occurs, it is …

The present invention relates to an amorphous oxide and a thin film transistor using the
amorphous oxide. In particular, the present invention provides an amorphous oxide having …

The present invention relates to an amorphous oxide and a thin film transistor using the
amorphous oxide. In particular, the present invention provides an amorphous oxide having …

Conventional televisions (TV) displays may be required to satisfy several market
requirements such as relatively large size, digital information display (DID), reduced cost …

Provided are a thin film transistor (TFT) including a selec tively crystallized channel layer,
and a method of manufac turing the TFT. The TFT includes a gate, the channel layer, a …

4,887,255 A 12/1989 Handa et a1. 5,744,864 A 4/1998 Cillessen et a1. 6,225,655 B1
5/2001 Moise et a1~ A semiconductor device can include a channel including an 6'25 i130 …

US20080254569A1 - Semiconductor Device - Google Patents US20080254569A1 -
Semiconductor Device - Google Patents Semiconductor Device Download PDF Info …

In a thin film transistor (1), a gate insulating layer (4) is formed on a gate electrode (3) formed
on an insulating Sub strate (2). Formed on the gate insulating layer (4) is a semi conductor …

To provide a semiconductor device in which a defect or fault is not generated and a
manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to …