To support the use of SiGe BiCMOS for future mission targets such as Europa, which are
subject to high radiation doses and cryogenic temperatures, SiGe heterojunction bipolar …

We present a co-designed Dicke switch and low-noise amplifier (LNA) in which the switch
incorporates a transformer-based topology and serves as the input matching network of the …

Europa lies in Jupiter's colossal radiation belt, producing radiation surface conditions that
are so severe (5 Mrad [Si]) that most modern electronics would experience degradation in a …

The temperature dependence of series resistance components in SiGe: C HBTs was
measured from 4.3 to 423 K. A physics-based description as well as various widely used …

This investigation examines the physical mechanisms that can increase the variability of
both pn junctions and silicon-germanium heterojunction bipolar transistors (SiGe HBTs) at …

Current mirrors (CMs) are essential building blocks for biasing electronic circuits. The
present work demonstrates that errors in mirroring ratios increase at cryogenic temperatures …

In this work, the numerical simulation of a SiGe heterojunction bipolar transistor (HBT) for
DC and AC performance operating at cryogenic temperature with a hydrodynamic carrier …