We have studied experimentally and theoretically the spontaneous emission from 1.3-and
1.5-/spl mu/m compressively strained InGaAsP multiple-quantum-well lasers in the …

A comprehensive theory of threshold characteristics of quantum dot (QD) lasers, which
provides a basis for optimization of their design, is reviewed. The dependences of the gain …

We investigate, both experimentally and theoretically, the gain characteristics of modulation
p-doped 1.3 μm quantum dot lasers epitaxially grown on silicon. Gain spectra and …

We present a comprehensive evaluation of the temperature effects on the threshold current
and the slope efficiency of 1.55/spl mu/m Fabry-Perot ridge-waveguide lasers between …

A theoretical analysis and computer simulation of the threshold current density j th and
characteristic temperature T 0 of multiple quantum well lasers (MQWLs) are presented …

An analytical expression for the low-temperature optical susceptibility of quantum-well
semiconductor lasers is presented based on a simple parabolic band model. The optical …

We develop a general approach to including the internal optical loss in the description of
semiconductor lasers with a quantum-confined active region. We assume that the internal …

Degradation mechanisms are investigated for laser diodes fabricated with different materials
and wavelengths between 660 and 1550 nm. A new approach is developed that evaluates …

The temperature dependence of the differential gain, carrier density, and transparency
current density for 1.3-/spl mu/m AlGaInAs-InP multiple-quantum-well lasers has been …

Дан обзор последовательной теории пороговых характеристик инжекционных лазеров
на квантовых точках, составляющей основу для оптимизации их конструкций. Детально …